BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 03 — 3 March 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 300
μ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
2.9 to 3.3
V
DS
(V)
32
P
L
(W)
130
G
p
(dB)
12.5
η
D
(%)
47
t
r
(ns)
20
t
f
(ns)
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an I
Dq
of 100 mA, a t
p
of 300
μs
with
δ
of 10 %:
Output power = 130 W
Power gain = 12.5 dB
Efficiency = 47 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.9 GHz to 3.3 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
1.3 Applications
S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLS6G2933S-130 -
Description
ceramic earless flanged cavity package; 2 leads
Version
SOT922-1
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
−0.5
-
−65
-
Max
60
+13
33
+150
225
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-mb)
Thermal characteristics
Parameter
Conditions
Typ
Unit
transient thermal impedance from junction T
case
= 85
°C;
P
L
= 130 W
to mounting base
t = 100
μs; δ
= 10 %
p
0.23 K/W
0.28 K/W
0.32 K/W
0.33 K/W
t
p
= 200
μs; δ
= 10 %
t
p
= 300
μs; δ
= 10 %
t
p
= 100
μs; δ
= 20 %
BLS6G2933S-130_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2010
2 of 12
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.6 mA
V
DS
= 10 V; I
D
= 180 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
Min
60
1.4
-
27
-
8.1
-
Typ
-
1.8
-
33
-
13
0.085
Max
-
2.4
4.2
-
450
-
Unit
V
V
μA
A
nA
S
0.135
Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; t
p
= 300
μ
s;
δ
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 100 mA;
T
case
= 25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol
P
L
V
CC
G
p
RL
in
P
L(1dB)
η
D
P
droop(pulse)
t
r
t
f
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
Conditions
Min Typ
-
-
10
7.5
-
40
-
-
-
130
-
10
140
47
0
20
6
Max Unit
-
32
-
-
-
0.5
50
50
W
V
dB
dB
W
%
dB
ns
ns
12.5 -
BLS6G2933S-130_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2010
3 of 12
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
Typical impedance
Z
S
Ω
2.2
−
j7.6
2.5
−
j6.6
3.2
−
j5.6
4.5
−
j4.8
6.8
−
j5.3
Z
L
Ω
4.5
−
j5.6
4.3
−
j5.7
4.0
−
j5.8
3.6
−
j5.8
3.2
−
j5.8
Table 8.
f
GHz
2.9
3.0
3.1
3.2
3.3
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 100 mA; P
L
= 130 W; t
p
= 300
μs; δ
= 10 %.
BLS6G2933S-130_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2010
4 of 12
NXP Semiconductors
BLS6G2933S-130
LDMOS S-band radar power transistor
7.2 Graphs
14
G
p
(dB)
10
001aaj266
14
G
p
(dB)
10
001aaj267
(2)
(3)
(1)
(2)
(3)
(1)
6
6
2
0
60
120
P
L
(W)
180
2
0
60
120
P
L
(W)
180
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
μs; δ
= 10 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 100
μs; δ
= 20 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 2.
Power gain as a function of load power; typical
values
60
001aaj268
Fig 3.
Power gain as a function of load power; typical
values
60
001aaj269
η
D
(%)
40
(1)
(2)
(3)
η
D
(%)
40
(1)
(2)
(3)
20
20
0
0
60
120
P
L
(W)
180
0
0
60
120
P
L
(W)
180
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
μs; δ
= 10 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 100
μs; δ
= 20 %.
(1) f = 2.9 GHz
(2) f = 3.1 GHz
(3) f = 3.3 GHz
Fig 4.
Drain efficiency as a function of load power;
typical values
Fig 5.
Drain efficiency as a function of load power;
typical values
BLS6G2933S-130_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 3 March 2010
5 of 12
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