BLF6G10LS-135RN,11 datasheet, PDF

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BLF6G10LS-135RN,11: DescriptionTRANSISTOR POWER LDMOS SOT502B; CategoryDiscrete semiconductor The transistor; File Size145KB，11 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLF6G10LS-135RN,11 Overview

TRANSISTOR POWER LDMOS SOT502B

BLF6G10LS-135RN,11 Parametric

Parameter Name	Attribute value
Source Url Status Check Date	2013-10-15 00:00:00
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Parts packaging code	SOT
Contacts	2
Manufacturer packaging code	SOT502B
Reach Compliance Code	compli
Base Number Matches	1

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BLF6G10-135RN;

BLF6G10LS-135RN

Power LDMOS transistor

Rev. 02 — 21 January 2010

Product data sheet

1. Product profile

1.1 General description

135 W LDMOS power transistor for base station applications at frequencies from

700 MHz to 1000 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

[1]

(MHz)

869 to 894

(V)

L(AV)

(W)

26.5

(dB)

21.0

(%)

28.0

ACPR

(dBc)

−39

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 5 MHz.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a

supply voltage of 28 V and an I

of 950 mA:

Average output power = 26.5 W

Power gain = 21.0 dB

Efficiency = 28.0 %

ACPR =

−39

dBc

Easy power control

Integrated ESD protection

Enhanced ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (700 MHz to 1000 MHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

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