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BLF8G20LS-200V,112

Description
Power LDMOS transistor
File Size341KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF8G20LS-200V,112 Overview

Power LDMOS transistor

BLF8G20LS-200V
Power LDMOS transistor
Rev. 3 — 21 January 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
1600
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
17.5
D
(%)
33
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (80 MHz typical)
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range

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