BLF7G22L-160;
BLF7G22LS-160
Power LDMOS transistor
Rev. 2.1 — 2 November 2011
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
1300
V
DS
(V)
28
P
L(AV)
(W)
43
G
p
(dB)
18.0
D
(%)
30
ACPR
(dBc)
32
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
NXP Semiconductors
BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF7G22L-160 (SOT502A)
1
3
2
2
3
sym112
1
BLF7G22LS-160 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G22L-160
BLF7G22LS-160
-
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
36
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 55 W
Typ
0.29
Unit
K/W
BLF7G22L-160_7G22LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2.1 — 2 November 2011
2 of 18
NXP Semiconductors
BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 2.16 mA
V
DS
= 10 V; I
D
= 216 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10.8 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
Min Typ
65
1.5
-
34
-
-
-
-
1.9
-
-
-
20
0.06
Max Unit
-
2.3
4.5
-
450
-
-
V
V
A
A
nA
S
7. Test information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1300 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 43 W
P
L(AV)
= 43 W
P
L(AV)
= 43 W
P
L(AV)
= 43 W
Min Typ
16.5 18.0
-
27
-
15
30
32
Max
-
6.5
-
28
Unit
dB
dB
%
dBc
Table 8.
Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f = 2167.5 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1300 mA; T
case
= 25
C;
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
PAR
O
Conditions
Min
3.9
Typ
Max Unit
dB
output peak-to-average ratio P
L(AV)
= 100 W;
at 0.01 % probability on CCDF
4.15 -
7.1 Ruggedness in class-AB operation
The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 1300 mA; P
L
= 160 W; f = 2110 MHz.
BLF7G22L-160_7G22LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2.1 — 2 November 2011
3 of 18
NXP Semiconductors
BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.2 2-Carrier W-CDMA 5 MHz
22
G
p
(dB)
20
G
p
18
30
001aan987
50
η
D
(%)
40
(2)
(1)
16
20
14
η
D
10
12
28
33
38
43
48
53
P
L
(dBm)
0
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 1.
-10
ACPR
5M
(dBc)
-20
Power gain and drain efficiency as function of load power; typical values
001aan988
-20
ACPR
10M
(dBc)
-30
001aan989
-30
-40
-40
f - 5 MHz
-50
f + 5 MHz
-60
(1)
(2)
-50
(1)
f - 10 MHz
(2)
-60
f + 10 MHz
28
33
38
43
48
53
P
L
(dBm)
-70
28
33
38
43
48
53
P
L
(dBm)
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 2.
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
Fig 3.
Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
BLF7G22L-160_7G22LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2.1 — 2 November 2011
4 of 18
NXP Semiconductors
BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
40
RL
in
(dB)
30
001aan990
9
PAR
(dB)
6
(1)
(2)
001aan991
(1)
20
(2)
3
10
0
28
33
38
43
48
53
P
L
(dBm)
0
28
33
38
43
48
53
P
L
(dBm)
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 4.
Input return loss as function of load power;
typical values
Fig 5.
Peak-to-average power ration as function of
load power; typical values
7.3 2-Carrier W-CDMA 10 MHz
22
G
p
(dB)
20
G
p
18
(2)
(1)
001aan992
50
η
D
(%)
40
30
16
20
14
η
D
10
12
28
33
38
43
48
53
P
L
(dBm)
0
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 6.
Power gain and drain efficiency as function of load power; typical values
BLF7G22L-160_7G22LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2.1 — 2 November 2011
5 of 18
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