BLF7G27L-135
Power LDMOS transistor
Rev. 2 — 26 March 2012
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
2600 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2600 to 2700
I
Dq
(mA)
1300
V
DS
(V)
28
P
L(AV)
(W)
35
G
p
(dB)
16.5
D
(%)
ACPR
5M
(dBc)
27.5
29
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
carrier spacing 5 MHz; channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2600 MHz to 2700 MHz frequency range
NXP Semiconductors
BLF7G27L-135
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G27L-135
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
Version
SOT502A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
[1]
Max
65
+13
28
+150
+200
Unit
V
V
A
C
C
-
Continuous use at maximum temperature will affect MTF.
5. Recommended operating conditions
Table 5.
Symbol
V
DS
T
case
Operating conditions
Parameter
drain-source voltage
case temperature
Conditions
Min
-
40
Max
32
+125
Unit
V
C
6. Thermal characteristics
Table 6.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 35 W
Typ
0.28
Unit
K/W
BLF7G27L-135
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 26 March 2012
2 of 16
NXP Semiconductors
BLF7G27L-135
Power LDMOS transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1 mA
V
DS
= 10 V; I
D
= 216 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 216 mA
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
Min
65
1.5
-
Typ
-
1.8
-
Max Unit
-
2.3
5
V
V
A
A
nA
S
34.2 40.5 -
-
-
-
-
500
1.87 -
0.07 -
8. Test information
Remark:
All testing performed in a class-AB production test circuit.
Table 8.
Functional test information
Mode of operation: 2-carrier W-CDMA, 3GPP; test model 1; 64 DPCH;. PAR = 8.4 dB at 0.01 %
probability on the CCDF, carrier spacing 5 MHz; f
1
= 2627.5 MHz; f
2
= 2687.5 MHz; RF performance
at V
DS
= 28 V; I
Dq
= 1300 mA; T
case
= 25
C; unless otherwise specified.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
5M
ACPR
10M
P
L(M)
PAR
[1]
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
adjacent channel power ratio (10 MHz)
peak output power
peak-to-average ratio
Conditions
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 70 W
P
L(AV)
= 70 W
[1]
[1]
Min
-
-
-
-
184
4.1
Typ
35
16
29
39
195
Max Unit
-
W
15.3 16.5 17.7 dB
9.5
dB
%
dBc
dBc
W
dB
26
31
210
24.0 27.5 -
4.45 4.9
Mode of operation: 1-carrier W-CDMA, 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability
on CCDF; channel bandwidth is 3.84 MHz; f = 2687.5 MHz. Rohde&Schwarz FSU spectrum analyzer,
CCDF method.
8.1 Ruggedness in class-AB operation
The BLF7G27L-135 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1300 mA; P
L
= 135 W (CW); f = 2600 MHz.
BLF7G27L-135
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 26 March 2012
3 of 16
NXP Semiconductors
BLF7G27L-135
Power LDMOS transistor
8.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
DDD
DDD
*
S
'
3
/
3
/
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
Fig 1.
Single carrier IS-95 power gain as a function of
average output power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of average output power;
typical values
BLF7G27L-135
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 26 March 2012
4 of 16
NXP Semiconductors
BLF7G27L-135
Power LDMOS transistor
$&35
N
DDD
$&35
N
DDD
3
/
3
/
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of average output power;
typical values
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of average output power;
typical values
3$5
DDD
3
DDD
3
/
3
/
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
Fig 5.
Single carrier IS-95 peak-to-average power
ratio as a function of average output power;
typical values
Fig 6.
Single carrier IS-95 peak output power as a
function of average output power;
typical values
BLF7G27L-135
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 26 March 2012
5 of 16
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