BLF7G27L-200PB
Power LDMOS transistor
Rev. 2 — 20 February 2012
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
2600 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2620 to 2690
I
Dq
(mA)
1700
V
DS
(V)
32
P
L(AV)
(W)
65
G
p
(dB)
16.5
D
(%)
29
ACPR
(dBc)
30
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2600 MHz to 2700 MHz frequency range
NXP Semiconductors
BLF7G27L-200PB
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6, 7
8, 9
[1]
Pinning
Description
drain1
drain2
gate1
gate2
source
sense drain
sense gate
2
sym127
Simplified outline
6
1
2
7
Graphic symbol
1
6, 7
8
[1]
3
4
9
5
3
4
5
8, 9
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G27L-200PB
-
flanged LDMOST ceramic package; 2 mounting holes;
8 leads
Version
SOT1110A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
Typ
0.22
Unit
K/W
thermal resistance from junction to case T
case
= 80
C;
P
L
= 65 W;
V
DS
= 32 V; I
Dq
= 1700 mA
Symbol Parameter
BLF7G27L-200PB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 20 February 2012
2 of 14
NXP Semiconductors
BLF7G27L-200PB
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C per section, unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
I
Dq
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
quiescent drain current
Conditions
V
GS
= 0 V; I
D
= 1.44 mA
V
DS
= 10 V; I
D
= 144 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.2 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.04 A
main transistor:
V
DS
= 32 V
sense transistor:
I
DS
= 31 mA
V
DS
= 30.1 V
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
28
-
0.1
Max Unit
-
2.3
2.8
-
280
-
V
V
A
A
nA
S
10.6 -
1530 1700 1870 mA
7. Test information
Remark:
All testing performed in a class-AB production test circuit.
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA, PAR = 8.4 dB at 0.01 % probability on the CCDF, 3GPP test
model 1; 1-64 DPCH; f
1
= 2622.5 MHz; f
2
= 2627.5 MHz; f
3
= 2682.5 MHz; f
4
= 2687.5 MHz;
RF performance at V
DS
= 32 V; I
Dq
= 1700 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
Min Typ Max Unit
-
-
-
65
-
W
dB
%
dBc
14.8 16.5 17.7 dB
15 5
-
30 27
25.5 29
7.1 Ruggedness in class-AB operation
The BLF7G27L-200PB is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 1700 mA; P
L
= 200 W (CW); f = 2600 MHz.
BLF7G27L-200PB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 20 February 2012
3 of 14
NXP Semiconductors
BLF7G27L-200PB
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data half device; I
Dq
= 850 mA; V
DS
= 32 V.
f
(MHz)
2500
2600
2700
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
3.07
j3.51
4.51
j12.51
7.56
j15.0
Z
L[1]
()
2.79
j4.86
2.61
j4.49
2.36
j4.41
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 1 Tone CW
DDD
*
S
'
DDD
3
3
V
DS
= 32 V; I
Dq
= 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
V
DS
= 32 V; I
Dq
= 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
Fig 2.
Power gain as a function of average load
power; typical values
Fig 3.
Drain efficiency as a function of average load
power; typical values
BLF7G27L-200PB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 20 February 2012
4 of 14
NXP Semiconductors
BLF7G27L-200PB
Power LDMOS transistor
7.4 1-carrier W-CDMA
DDD
*
S
'
3$5
DDD
3
3
V
DS
= 32 V; I
Dq
= 1700 mA; PAR = 7.2 dB at 0.01
probability on the CCDF.
(1) G
p
; f = 2620 MHz
(2) G
p
; f = 2650 MHz
(3) G
p
; f = 2690 MHz
(4)
D
; f = 2620 MHz
(5)
D
; f = 2650 MHz
(6)
D
; f = 2690 MHz
V
DS
= 32 V; I
Dq
= 1700 mA; PAR = 7.2 dB at 0.01
probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 4.
Power gain and drain efficiency as function of
average load power; typical values
Fig 5.
Peak-to-average power ratio as a function of
peak power; typical values
DDD
$&35
0
3
V
DS
= 32 V; I
Dq
= 1700 mA; PAR = 7.2 dB at 0.01
probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 6.
BLF7G27L-200PB
Adjacent power channel ratio (5 MHz) as a function of average load power; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 20 February 2012
5 of 14
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