BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 02 — 1 June 2010
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation f (MHz)
V
DS
(V) P
L(AV)
(W) P
L(M)[1]
(W) G
p
(dB)
η
D
(%) ACPR
885k
(dBc) ACPR
1980k
(dBc)
9
70
14
23
−49
[3]
−64
[3]
1-carrier N-CDMA
[2]
3400 to 3600 28
[1]
[2]
[3]
P
L(M)
stands for peak output power.
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %
probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I
Dq
of 450 mA, a
power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
Qualified up to a maximum V
DS
operation of 32 V
Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
1.3 Applications
RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G38-50 (SOT502A)
1
1
3
2
2
3
sym112
BLF6G38LS-50 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G38-50
BLF6G38LS-50
-
-
Description
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
16.5
+150
200
Unit
V
V
A
°C
°C
BLF6G38-50_BLF6G38LS-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
2 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
Conditions
Type
BLF6G38-50
BLF6G38LS-50
Typ
0.9
0.7
Unit
-
-
thermal resistance from T
case
= 80
°C;
junction to case
P
L
= 50 W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C per section; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= 0 V; I
D
= 0.4 mA
V
DS
= 10 V; I
D
= 80 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= +11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.8 A
Min
65
1.4
-
11.8
-
-
-
-
Typ
-
2
-
16.4
-
5.6
0.18
1.17
Max
-
2.4
2.8
-
280
-
0.29
-
Unit
V
V
μA
A
nA
S
Ω
pF
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.8 A
feedback capacitance
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel
bandwidth is 1.23 MHz; f
1
= 3400 MHz; f
2
= 3500 MHz; f
3
= 3600 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 450 mA; T
case
= 25
°
C; unless otherwise specified, in a class-AB production
circuit.
Symbol
P
L(M)
G
p
RL
in
η
D
ACPR
885k
Parameter
peak output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
P
L(AV)
= 9 W
P
L(AV)
= 9 W
P
L(AV)
= 9 W
P
L(AV)
= 9 W
P
L(AV)
= 9 W
[1]
[1]
Min
65
-
20
−46
−62
Typ
70
−10
23
−49
−64
Max
-
-
-
-
-
-
Unit
W
dB
dB
%
dBc
dBc
12.5 14
ACPR
1980k
adjacent channel power ratio (1980 kHz) P
L(AV)
= 9 W
[1]
Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 450 mA; P
L
= P
L(1dB)
; f = 3600 MHz.
BLF6G38-50_BLF6G38LS-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
3 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
g
/ T
b
= 1 / 8;
FFT = 1024; zone type = PUSC;
δ
= 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
×
30 subchannels; P
L
= P
L(nom)
+ 3.86 dB.
Table 8.
Zone 0
Zone 0
Zone 0
Frame structure
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
Data length
3 bit
692 bit
10000 bit
FCH
data
data
2 symbols
×
4 subchannels
2 symbols
×
26 subchannels
44 symbols
×
30 subchannels
Frame contents
7.2.2 Graphs
001aah395
001aah396
5
EVM
(%)
4
15
G
p
(dB)
13
G
p
30
η
D
(%)
24
3
11
η
D
18
2
9
12
1
7
6
0
0
4
8
P
L(AV)
(W)
12
5
0
4
8
P
L(AV)
(W)
0
12
V
DS
= 28 V; I
Dq
= 450 mA; f = 3500 MHz.
V
DS
= 28 V; I
Dq
= 450 mA; f = 3500 MHz.
Fig 1.
EVM as a function of average load power;
typical values
Fig 2.
Power gain and drain efficiency as functions
of average load power; typical values
BLF6G38-50_BLF6G38LS-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
4 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
−20
ACPR
(dBc)
−30
(1)
001aah397
−40
−50
(2)
(3)
−60
−70
0
4
8
P
L(AV)
(W)
12
V
DS
= 28 V; I
Dq
= 450 mA; f = 3500 MHz.
(1)
(2)
(3)
f = 10 MHz
f = 20 MHz
f = 30 MHz
Fig 3.
Adjacent channel power ratio as a function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
001aah398
001aah399
16
G
p
(dB)
15
G
p
14
η
D
(%)
25
26
−40
ACPR
(dBc)
−50
(1)
(2)
ACPR
885k
24
13
η
D
23
ACPR
1500k
(1)
(2)
12
22
−60
(1)
ACPR
1980k
11
21
(2)
10
3400
3450
3500
3550
f (MHz)
20
3600
−70
3400
3450
3500
3550
f (MHz)
3600
V
DS
= 28 V; I
Dq
= 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
V
DS
= 28 V; I
Dq
= 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 4.
Power gain and drain efficiency as functions
of frequency; typical values
Fig 5.
Adjacent channel power ratio as a function of
frequency; typical values
BLF6G38-50_BLF6G38LS-50
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 June 2010
5 of 13
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