BLF6G38-50,135 datasheet, PDF - EEWORLD Datasheet

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BLF6G38-50,135: DescriptionS BAND, Si, N-CHANNEL, RF POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size154KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLF6G38-50,135 Overview

S BAND, Si, N-CHANNEL, RF POWER, MOSFET

BLF6G38-50,135 Parametric

Parameter Name	Attribute value
Source Url Status Check Date	2013-06-14 00:00:00
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT
Contacts	2
Manufacturer packaging code	SOT502A
Reach Compliance Code	compliant
Base Number Matches	1

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BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

Rev. 02 — 1 June 2010

Product data sheet

1. Product profile

1.1 General description

50 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3800 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation f (MHz)

(V) P

L(AV)

(W) P

L(M)[1]

(W) G

(dB)

(%) ACPR

885k

(dBc) ACPR

1980k

(dBc)

−49

[3]

−64

[3]

1-carrier N-CDMA

[2]

3400 to 3600 28

[1]

[2]

[3]

L(M)

stands for peak output power.

Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the

CCDF. Channel bandwidth is 1.23 MHz.

Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %

probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of

3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I

of 450 mA, a

power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:

Qualified up to a maximum V

operation of 32 V

Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range

Integrated ESD protection

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation

Internally matched for ease of use

Low gold plating thickness on leads

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF6G38-50,135 Related Products

	BLF6G38-50,135	BLF6G38-50,112
Description	S BAND, Si, N-CHANNEL, RF POWER, MOSFET	S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Brand Name	NXP Semiconductor	NXP Semiconductor
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	SOT	SOT
Contacts	2	2
Manufacturer packaging code	SOT502A	SOT502A
Reach Compliance Code	compliant	compliant
Base Number Matches	1	1

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