TO
-2
20F
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
Rev. 5 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a plastic full pack package. These devices
balance the requirements of commutation performance and gate sensitivity. The ‘sensitive
gate’ E series and ‘logic level’ D series are intended for interfacing with low power drivers,
including microcontrollers.
1.2 Features and benefits
Suitable for interfacing with low power
drivers, including microcontrollers
Isolated mounting base
1.3 Applications
Motor control
High inductive loads
1.4 Quick reference data
V
DRM
600 V (BTA204X-600D)
V
DRM
600 V (BTA204X-600E)
V
DRM
600 V (BTA204X-600F)
V
DRM
800 V (BTA204X-800E)
I
T(RMS)
4 A
I
GT
5 mA (BTA204X-600D)
I
GT
10 mA (BTA204X-600E)
I
GT
25 mA (BTA204X-600F)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base (isolated)
Simplified outline
mb
Symbol
T2
sym051
T1
G
1 2 3
SOT186A (TO-220F)
NXP Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
3. Ordering information
Table 2.
Ordering information
Package
Name
BTA204X-600D
BTA204X-600E
BTA204X-600F
BTA204X-800E
TO-220F
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 ‘full pack’
Version
SOT186A
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BTA204X-600D
BTA204X-600E
BTA204X-600F
BTA204X-800E
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
hs
92
C;
Figure 4
and
Figure 5
full sine wave;
T
j
= 25
C
prior to surge;
Figure 2
and
Figure 3
t = 20 ms
t = 16.7 ms
I
2
t
dl
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
[1]
Conditions
Min
-
-
-
-
-
Max
600
600
600
800
4
Unit
V
V
V
V
A
-
-
-
-
-
-
25
27
3.1
100
2
5
0.5
+150
125
A
A
A
2
S
A/s
A
W
W
C
C
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/s
over any 20 ms period
-
40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/s.
BTA204X_SER_D_E_F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
2 of 13
NXP Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
8
P
tot
(W)
6
α
=
180
120
90
4
60
30
001aac329
81
T
hs(max)
(°C)
92
103
2
α
α
114
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
= conduction angle
Fig 1.
30
Total power dissipation as a function of RMS on-state current; maximum values
001aac331
I
T
I
TSM
(A)
20
I
TSM
t
T
T
j(init)
= 25
°C
max
10
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204X_SER_D_E_F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
3 of 13
NXP Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
10
3
I
T
I
TSM
(A)
001aac330
I
TSM
t
T
T
j(init)
= 25
°C
max
10
2
(2)
(1)
10
10
−5
10
−4
10
−3
10
−2
t (s)
10
−1
t
p
20 ms
(1) dI
T
/dt limit
(2) T2 G+ quadrant
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
001aac333
12
I
T(RMS)
(A)
8
5
I
T(RMS)
(A) 4
92
°C
001aac332
3
2
4
1
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
hs
(°C)
150
f = 50 Hz; T
h
92
C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of heatsink
temperature; maximum values
BTA204X_SER_D_E_F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
4 of 13
NXP Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
5. Thermal characteristics
Table 4.
Symbol
R
th(j-hs)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
5.5
Unit
K/W
thermal resistance from junction to full or half cycle with
heatsink
heatsink compound;
Figure 6
full or half cycle without
heatsink compound;
Figure 6
R
th(j-a)
thermal resistance from junction to in free air
ambient
-
-
7.2
K/W
-
55
-
K/W
10
(1)
Z
th(j-hs)
(K/W)
1
(2)
(3)
(4)
001aac339
10
−1
P
D
t
p
10
−2
10
−5
t
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional without heatsink compound
(2) Unidirectional with heatsink compound
(3) Bidirectional without heatsink compound
(4) Bidirectional with heatsink compound
Fig 6.
Transient thermal impedance as a function of pulse width
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
hs
= 25
C unless otherwise specified.
Symbol
V
isol
Parameter
Conditions
Min
-
Typ
-
Max
2500
Unit
V
RMS isolation voltage f = 50 Hz to 60 Hz; sinusoidal
from all three
waveform; R.H.
65 %; clean
terminals to external
and dust free
heatsink
capacitance from
pin 2 to external
heatsink
f = 1 MHz
C
isol
-
10
-
pF
BTA204X_SER_D_E_F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
5 of 13
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