DP
AK
BTA204S-600B
3Q Hi-Com Triac
Rev. 4 — 10 May 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK)
surface-mountable plastic package intended for use in circuits where high static and
dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated
RMS current at the maximum rated junction temperature without the aid of a snubber.
1.2 Features and benefits
3Q technology for improved noise
immunity
High blocking voltage capability
High commutation capability with
maximum false trigger immunity
High immunity to false turn-on by dV/dt
Less sensitive gate for very high noise
immunity
Planar passivated for voltage
ruggedness and reliability
Surface-mountable package
Triggering in three quadrants only
1.3 Applications
General purpose motor control circuits
Home appliances
Rectifier-fed DC inductive loads e.g.
DC motors and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak off-state
voltage
non-repetitive peak
on-state current
RMS on-state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
mb
≤
107 °C;
see
Figure 1;
see
Figure 2;
see
Figure 3
Conditions
Min
-
-
Typ
-
-
Max Unit
600
25
V
A
I
T(RMS)
-
-
4
A
NXP Semiconductors
BTA204S-600B
3Q Hi-Com Triac
Quick reference data
…continued
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Min
-
-
-
Typ
-
-
-
Max Unit
50
50
50
mA
mA
mA
Table 1.
Symbol
I
GT
Static characteristics
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
2
1
3
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA204S-600B
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 10 May 2011
2 of 14
NXP Semiconductors
BTA204S-600B
3Q Hi-Com Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤
107 °C; see
Figure 1;
see
Figure 2;
see
Figure 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms; sine-wave pulse
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
Max
600
4
25
27
3.1
100
2
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
5
I
T(RMS)
(A)
4
003aad615
12
I
T(RMS )
(A)
10
003aag083
107 °C
8
3
6
2
4
1
2
0
-50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
s urge duration (s)
Fig 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 10 May 2011
3 of 14
NXP Semiconductors
BTA204S-600B
3Q Hi-Com Triac
8
P
tot
(W)
6
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
a = 180 °
a
003aag081
101
T
mb(max)
104 (°C)
107
110
113
116
120 °
90 °
60 °
30 °
4
2
119
122
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
Fig 3.
10
3
I
TS M
(A)
Total power dissipation as a function of RMS on-state current; maximum values
003aag085
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
Fig 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 10 May 2011
4 of 14
NXP Semiconductors
BTA204S-600B
3Q Hi-Com Triac
30
I
TSM
(A)
003aag086
20
10
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204S-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 10 May 2011
5 of 14
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