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2SJ287-TD

Description
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243
CategoryDiscrete semiconductor    The transistor   
File Size107KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SJ287-TD Overview

Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243

2SJ287-TD Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.5 A
Maximum drain-source on-resistance2.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-243
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power consumption environment3.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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