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2SD1724-T

Description
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126LP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size44KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SD1724-T Overview

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126LP, 3 PIN

2SD1724-T Parametric

Parameter NameAttribute value
Objectid1999663437
Parts packaging codeSIP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-126
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
Ordering number:ENN2047A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1167/2SD1724
100V/3A Switching Applications
Features
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2043B
[2SB1167/2SD1724]
8.0
4.0
2.0
2.7
Features
· Low collector-to-emitter saturation voltage.
· High f
T
.
· Excellent linearity of h
FE
.
· Fast switching time.
1.6
0.8
1.5
0.8
0.6
3.0
15.5
9.0
11.0
0.5
1
2
3
( ) : 2SB1167
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
4.8
1.2
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Ratings
(–)120
(–)100
(–)6
(–)3
(–)6
1.2
Unit
V
V
V
A
A
W
W
Tc=25˚C
20
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)0.5A
VCE=(–)5V, IC=(–)2A
VCE=(–)10V, IC=(–)0.5A
70*
40
(130)
180
R
100 to 200
S
140 to 280
T
200 to 400
Conditions
Ratings
min
typ
max
(–)1
(–)1
400*
Unit
µA
µA
MHz
MHz
* : The 2SB1167/2SD1724 are classified by 0.5A h
FE
as follows :
Rank
hFE
Q
70 to 140
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4
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