ZTX688B
ZTX688B
MAX.
MHz
pF
pF
ns
ns
I
C
=500mA, I
B1
=50mA
I
B2
=50mA, V
CC
=10V
V
CB
=10V, f=1MHz
V
EB
=0.5V, f=1MHz
I
C
=50mA, V
CE
=5V
f=50MHz
UNIT
CONDITIONS.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Transition Frequency
f
T
150
Input Capacitance
C
ibo
200
C
B
Output Capacitance
C
obo
40
Switching Times
t
on
t
off
40
500
ISSUE 2 MAY 94
FEATURES
* 12 Volt V
CEO
* Gain of 400 at I
C
=3 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
E
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX.
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation
at T
amb
=25°C
derate above 25°C
175
116
70
°C/W
°C/W
°C/W
UNIT
Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
12
12
5
10
3
1.5
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
mW/°C
-55 to +200
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Operating and Storage Temperature Range
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
D=1 (D.C.)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
MIN.
12
12
TYP.
MAX.
UNIT
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
2.5
t
1
D=t
1
/t
P
t
P
D=0.5
200
2.0
C
as
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
1.5
e
te
m
5
I
CBO
I
EBO
V
CE(sat)
Collector-Emitter Saturation
Voltage
0.1
0.1
V
µ
A
µ
A
I
E
=100
µ
A
V
CB
=10V
V
EB
=4V
pe
1.0
D=0.2
D=0.1
Single Pulse
Am
ra
100
bie
tu
nt t
re
em
Max Power Dissipation - (Watts)
0
0.001
0.01
0.1
1
10
-40 -20
0
Thermal Resistance (°C/W)
0.5
per
at u
re
100
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
0.04
0.06
0.18
0.35
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
500
400
100
3-232
1.1
1
V
V
V
V
V
V
I
C
=0.1A, I
B
=1mA
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
I
C
=3A, I
B
=20mA*
IC=3A, V
CE
=2V*
I
C
=0.1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Derating curve
Maximum transient thermal impedance
3-233
ZTX688B
ZTX688B
MAX.
MHz
pF
pF
ns
ns
I
C
=500mA, I
B1
=50mA
I
B2
=50mA, V
CC
=10V
V
CB
=10V, f=1MHz
V
EB
=0.5V, f=1MHz
I
C
=50mA, V
CE
=5V
f=50MHz
UNIT
CONDITIONS.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Transition Frequency
f
T
150
Input Capacitance
C
ibo
200
C
B
Output Capacitance
C
obo
40
Switching Times
t
on
t
off
40
500
ISSUE 2 MAY 94
FEATURES
* 12 Volt V
CEO
* Gain of 400 at I
C
=3 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
E
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX.
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation
at T
amb
=25°C
derate above 25°C
175
116
70
°C/W
°C/W
°C/W
UNIT
Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
12
12
5
10
3
1.5
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
mW/°C
-55 to +200
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Operating and Storage Temperature Range
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
D=1 (D.C.)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
MIN.
12
12
TYP.
MAX.
UNIT
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
2.5
t
1
D=t
1
/t
P
t
P
D=0.5
200
2.0
C
as
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
1.5
e
te
m
5
I
CBO
I
EBO
V
CE(sat)
Collector-Emitter Saturation
Voltage
0.1
0.1
V
µ
A
µ
A
I
E
=100
µ
A
V
CB
=10V
V
EB
=4V
pe
1.0
D=0.2
D=0.1
Single Pulse
Am
ra
100
bie
tu
nt t
re
em
Max Power Dissipation - (Watts)
0
0.001
0.01
0.1
1
10
-40 -20
0
Thermal Resistance (°C/W)
0.5
per
at u
re
100
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
0.04
0.06
0.18
0.35
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
500
400
100
3-232
1.1
1
V
V
V
V
V
V
I
C
=0.1A, I
B
=1mA
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
I
C
=3A, I
B
=20mA*
IC=3A, V
CE
=2V*
I
C
=0.1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Derating curve
Maximum transient thermal impedance
3-233
ZTX688B
TYPICAL CHARACTERISTICS
T
amb
=25°C
I
C
/I
B
=100
-55°C
+25°C
+100°C
+175°C
0.8
I
C
/I
B
=200
I
C
/I
B
=100
I
C
/I
B
=10
0.8
0.6
0.6
V
CE(sat)
- (Volts)
0.2
V
CE(sat)
- (Volts)
0.4
0.4
0.2
0
0.01
0.1
1
10
0.01
0.1
1
10
0
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
I
C
/I
B
=100
V
CE
=2V
-55°C
+25°C
+100°C
+175°C
1.4
+100°C
+25°C
-55°C
1.5K
1.6
1.2
1.4
1.0
1.2
1K
0.8
1.0
0.6
0.8
0.4
V
BE(sat)
- (Volts)
500
0.6
h
FE
- Normalised Gain
0.2
h
FE
- Typical Gain
0.4
0.2
0.01
0.1
1
10
0
0
0.01
0.1
1
10
0
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
10
V
CE
=2V
1.6
-55°C
+25°C
+100°C
+175°C
1.4
1
1.2
1.0
V
BE
- (Volts)
0.8
0.6
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.4
0
1
0
0.01
0.1
1
10
I
C
- Collector Current (Amps)
0.2
0.01
0.1
10
100
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-234
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