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2SD789D

Description
1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size45KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SD789D Overview

1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN

2SD789D Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionTO-92MOD, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.9 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

2SD789D Related Products

2SD789D 2SD789C 2SD789B
Description 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN
Parts packaging code TO-92 TO-92 TO-92
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Configuration SINGLE Single SINGLE
Minimum DC current gain (hFE) 250 160 100
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.9 W 0.9 W 0.9 W
surface mount NO NO NO
Nominal transition frequency (fT) 100 MHz 80 MHz 100 MHz
Base Number Matches 1 1 1
package instruction TO-92MOD, 3 PIN - TO-92MOD, 3 PIN
Collector-emitter maximum voltage 50 V - 50 V
JESD-30 code O-PBCY-T3 - O-PBCY-T3
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - ROUND
Package form CYLINDRICAL - CYLINDRICAL
Certification status Not Qualified - Not Qualified
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location BOTTOM - BOTTOM
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials SILICON - SILICON

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