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2SC5501A4

Description
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MCP4, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size51KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC5501A4 Overview

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MCP4, 4 PIN

2SC5501A4 Parametric

Parameter NameAttribute value
Objectid1874790301
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.07 A
Collector-based maximum capacity1.2 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)7000 MHz
Ordering number : ENA1061
2SC5501A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5501A
Features
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Low-noise
: NF=1.0dB typ (f=1GHz).
High gain
:
⏐S21e⏐
2
=13dB typ (f=1GHz).
High cut-off frequency : fT=7GHz typ.
Large allowable collector dissipation : PC=500mW max.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
When mounted on ceramic substrate (250mm
✕0.8mm)
2
Conditions
Ratings
20
10
2
70
500
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=20mA
90*
Conditions
Ratings
min
typ
max
1.0
10
270*
Unit
μA
μA
* : The 2SC5501A is classified by 20mA hFE as follows :
Marking
LN4
LN5
Rank
4
5
hFE
90 to 180
135 to 270
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60408AB TI IM TC-00001434 No. A1061-1/5

2SC5501A4 Related Products

2SC5501A4
Description RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MCP4, 4 PIN
Objectid 1874790301
package instruction SMALL OUTLINE, R-PDSO-G4
Contacts 4
Reach Compliance Code unknown
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 0.07 A
Collector-based maximum capacity 1.2 pF
Collector-emitter maximum voltage 10 V
Configuration SINGLE
Minimum DC current gain (hFE) 90
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4
Number of components 1
Number of terminals 4
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type NPN
Maximum power dissipation(Abs) 0.5 W
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 7000 MHz
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