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2SB919S

Description
8A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size37KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SB919S Overview

8A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

2SB919S Parametric

Parameter NameAttribute value
Objectid1481156526
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)8 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.5 V
Ordering number:ENN1046B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB919/2SD1235
30V/8A High-Speed Switching Applications
Applications
· Large current switching of relay drivers, high-speed
inverters, converters.
Package Dimensions
unit:mm
2010C
[2SB919/2SD1235]
10.2
3.6
5.1
2.7
6.3
Features
· Low collector-to-emitter saturation voltage :
V
CE(sat)
=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
18.0
4.5
1.3
5.6
1.2
0.8
14.0
15.1
0.4
1
2
3
2.7
( ) : 2SB919
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Conditions
Ratings
(–)60
(–)30
(–)6
(–)8
(–)15
1.75
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
70*
30
120
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB919/2SD1235 are classified as follows according to h
FE
at 1A.
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/D251MH/4067KI/D152KI, TS No.1046–1/4
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