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2SA1374D

Description
Small Signal Bipolar Transistor, 0.1A I(C), PNP, SPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size21KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

2SA1374D Overview

Small Signal Bipolar Transistor, 0.1A I(C), PNP, SPAK-3

2SA1374D Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)500
JESD-30 codeR-PSIP-T3
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Nominal transition frequency (fT)250 MHz
Base Number Matches1
2SA1374
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
SPAK
1
23
1. Emitter
2. Collector
3. Base

2SA1374D Related Products

2SA1374D 2SA1374C
Description Small Signal Bipolar Transistor, 0.1A I(C), PNP, SPAK-3 Small Signal Bipolar Transistor, 0.1A I(C), PNP, SPAK-3
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 500 160
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of terminals 3 3
Maximum operating temperature 140 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Base Number Matches 1 1
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