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2SA2126(TP-FA)

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252VAR
CategoryDiscrete semiconductor    The transistor   
File Size41KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SA2126(TP-FA) Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252VAR

2SA2126(TP-FA) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
surface mountYES
Base Number Matches1
Ordering number : ENN7990
2SA2126
2SA2126
Applications
PNP Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
-
-50
-
-50
-
-50
--6
--3
--6
--600
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=-
-40V, IE=0
VEB=-
-4V, IC=0
VCE=-
-2V, IC=--100mA
VCE=-
-10V, IC=--500mA
VCB=-
-10V, f=1MHz
200
390
24
Conditions
Ratings
min
typ
max
--1
--1
560
MHz
pF
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21505EA TS IM TB-00000214 No.7990-1/4

2SA2126(TP-FA) Related Products

2SA2126(TP-FA) 2SA2126(TP)
Description TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252VAR TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-251VAR
Reach Compliance Code compli compliant
Maximum collector current (IC) 3 A 3 A
Configuration Single SINGLE
Minimum DC current gain (hFE) 200 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 15 W 15 W
surface mount YES NO
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