INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB1079
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= -
10A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -100V(Min)
·Complement
to Type 2SD1559
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-100
-100
-7
-20
-30
-3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
CEO
h
FE
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff current
Collector Cutoff current
DC Current Gain
CONDITIONS
I
C
= -200mA, R
BE
=
∞
I
C
= -25mA, R
BE
=
∞
I
C
= -0.1mA ,I
E
= 0
I
E
= -50mA ,I
C
= 0
I
C
= -10A ,I
B
= -20mA
I
C
= -20A ,I
B
= -200mA
I
C
= -10A ,I
B
= -20mA
I
C
= -20A ,I
B
= -200mA
V
CB
= -100V, I
E
= 0
V
CE
= -80V, R
BE
=
∞
I
C
= -10A ; V
CE
= -3V
1000
MIN
-100
-100
-100
-7
TYP.
2SB1079
MAX
UNIT
V
V
V
V
-2.0
-3.0
-2.5
-3.5
-0.1
-1.0
V
V
V
V
mA
mA
Switching Times
t
on
t
stg
Turn-on Time
I
C
= -10 A,
I
B1
= -I
B2
= -20 mA;
Storage Time
3.5
0.6
μs
μs
isc Website：www.iscsemi.cn
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