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DATA SHEET
SILICON POWER TRANSISTOR
2SC4336
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SC4336 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
17 ±0.2
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 ±0.2
4.7 MAX.
φ
3.2 ±0.2
5 ±0.1
3.0 MAX.
2.8 ±0.2
5 ±0.2
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
•
Mold package that does not require an insulating board or
insulation bushing
•
Fast switching speed
•
Low collector-to-emitter saturation voltage
V
CE(sat)
≤
0.3 V MAX. (I
C
= 6.0 A)
0.8 ±0.1
2.54 TYP.
1.3 ±0.2
1.5 ±0.2
2.54 TYP.
13.5 MIN.
12 ±0.2
0.5 ±0.1
2.5 ±0.1
ORDERING INFORMATION
PART NUMBER
2SC4336
PACKAGE
Isolated TO-220 (MP-45)
1 2 3
1: Base
2: Collector
3: Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation (T
C
= 25°C)
Total power dissipation (T
A
= 25°C)
Junction temperature
Storage temperature
Note
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
P
T
T
j
T
stg
100
100
7.0
10
20
6.0
30
2.0
150
−55
to +150
V
V
V
A
A
A
W
W
°C
°C
Note
PW
≤
300
µ
s, Duty Cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17261EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
Embedded System
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