PD - 91325C
IRL2505
l
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Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 0.008Ω
G
I
D
= 104A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 is universally preferred for all commercial-
Industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
104
74
360
200
1.3
± 16
500
54
20
5.0
55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Juction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
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1
11/19/01
IRL2505
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
–––
–––
1.0
59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.035 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.008
V
GS
= 10V, I
D
= 54A
––– 0.010
Ω
V
GS
= 5.0V, I
D
= 54A
––– 0.013
V
GS
= 4.0V, I
D
= 45A
––– 2.0
V
V
DS
= V
GS
, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 54A
––– 25
V
DS
= 55V, V
GS
= 0V
µA
––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– 100
V
GS
= 16V
nA
––– -100
V
GS
= -16V
––– 130
I
D
= 54A
––– 25
nC
V
DS
= 44V
––– 67
V
GS
= 5.0V, See Fig. 6 and 13
12 –––
V
DD
= 28V
160 –––
I
D
= 54A
ns
43 –––
R
G
= 1.3Ω, V
GS
= 5.0V
84 –––
R
D
= 0.50Ω, See Fig. 10
Between lead,
7.5 –––
nH
and center of die contact
5000 –––
V
GS
= 0V
1100 –––
pF
V
DS
= 25V
390 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 104
showing the
A
G
integral reverse
––– ––– 360
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 54A, V
GS
= 0V
––– 140 210
ns
T
J
= 25°C, I
F
= 54A
––– 650 970
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 240µH
R
G
= 25Ω, I
AS
= 54A. (See Figure 12)
I
SD
≤
54A, di/dt
≤
230A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
2
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IRL2505
1000
TOP
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
1000
I
D
, D rain-to-S ource C urrent (A )
100
I
D
, Drain-to-Source Current (A )
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
2 .5 V
10
10
2 .5 V
2 0µ s P U LS E W ID T H
T
J
= 2 5°C
0.1
1
10
1
A
1
0.1
1
2 0µ s P U LS E W ID TH
T
J
= 1 75 °C
10
100
100
A
V
D S
, D rain-to-S ource V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
I
D
= 90A
T
J
= 25 °C
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, D ra in -to-S ourc e C urrent (A)
2.0
T
J
= 1 75 °C
1.5
1.0
10
0.5
1
2.5
3.5
4.5
V
DS
= 25V
2 0 µ s P U LS E W ID TH
5.5
6.5
7.5
A
0.0
-60 -40 -20 0
V
GS
= 5V
20 40 60 80 100 120 140 160 180
V
G S
, G ate-to -Sou rce Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL2505
10000
8000
C
iss
6000
V
G S
, G a te-to-S ou rc e V o ltag e (V )
V
GS
C
is s
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
d s
+ C
gd
15
I
D
= 5 4A
V
D S
= 44 V
V
D S
= 28 V
12
C , Capacitance (pF)
9
4000
C
oss
6
2000
C
rss
A
1
10
100
3
0
0
0
40
80
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
120
160
A
200
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n )
10µs
I
D
, D rain Current (A )
100
100µ s
100
T
J
= 17 5°C
T
J
= 2 5°C
1m s
10
10m s
10
0.4
0.8
1.2
1.6
2.0
V
G S
= 0V
2.4
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
100
A
2.8
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRL2505
120
LIMITED BY PACKAGE
100
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
80
5.0V
60
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
V
DS
20
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.001
0.01
1
P
DM
t
1
t
2
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Embedded System
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