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2SC3496TX

Description
Power Bipolar Transistor, 1A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size141KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

2SC3496TX Overview

Power Bipolar Transistor, 1A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

2SC3496TX Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)3
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1.5 V
Base Number Matches1
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