Transistor
2SD0661, 2SD0661A
(2SD661, 2SD661A)
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
6.9±0.1
2.5±0.1
1.0
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
1.5
●
R
0.
●
1.0±0.1
0.85
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Ratings
35
55
35
55
7
Unit
V
Collector to
2SD0661
3
2
1
base voltage
Collector to
2SD0661A
2SD0661
2.5
2.5
emitter voltage 2SD0661A
Emitter to base voltage
Peak collector current
Collector current
V
V
200
100
400
150
mA
mA
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Collector power dissipation
Junction temperature
Storage temperature
mW
˚C
˚C
T
stg
–55 ~ +150
■
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
(Ta=25˚C)
Symbol
ue
Conditions
min
typ
1.25±0.05
■
Absolute Maximum Ratings
(Ta=25˚C)
0.55±0.1
0.45±0.05
max
0.1
1
nt
in
4.1±0.2
4.5±0.1
●
Low noise voltage NV.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
CBO
I
CEO
is
2SD0661
/D
2SD0661A
2SD0661
2SD0661A
V
CBO
V
CEO
V
EBO
h
FE*
f
T
NV
Collector to emitter
voltage
Emitter to base voltage
M
Transition frequency
Noise voltage
*
h
Pl
e
Collector to emitter saturation voltage
ai
Forward current transfer ratio
V
CE(sat)
FE
Rank classification
R
210 ~ 340
S
290 ~ 460
T
360 ~ 650
Note.) The Part numbers in the Parenthesis show conventional
part number.
h
FE
Rank
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
2.4±0.2 2.0±0.2 3.5±0.1
7
■
Features
1.5 R0.9
R0.9
0.4
1.0
Unit
µA
µA
V
V
CB
= 20V, I
E
= 0
co
V
CE
= 20V, I
B
= 0
I
C
= 10µA, I
E
= 0
35
55
35
55
7
2SD
ce
Type
en
an
I
C
= 2mA, I
B
= 0
V
V
I
E
= 10µA, I
C
= 0
nt
V
CE
= 10V, I
C
= 2mA
210
650
1
I
C
= 100mA, I
B
= 10mA
V
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
200
150
MHz
mV
R
g
= 100kΩ, Function = FLAT
551
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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