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2SB1387RF

Description
Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size101KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SB1387RF Overview

Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon

2SB1387RF Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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