Transistors
2SD0662, 2SD0662B
(2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9
±0.1
(1.5)
2.5
±0.1
(1.0)
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
(0.4)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
2SD0662
2SD0662B
Collector-emitter voltage 2SD0662
(Base open)
2SD0662B
Emitter-base voltage (Collector open)
Collector current
V
EBO
I
C
P
C
T
j
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CEO
Collector-emitter voltage
(Base open)
2SD0662
ue
2SD0662B
nt
in
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
/D
Collector-emitter saturation voltage
V
CE(sat)
f
T
C
ob
ce
Transition frequency
M
ai
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
nt
en
Collector output capacitance
(Common base, input open circuited)
h
FE
30 to 100
Pl
e
Rank
P
Publication date: November 2002
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
3.5
±0.1
R 0.9
R 0.7
2.0
±0.2
•
High collector-emitter voltage (Base open) V
CEO
•
High transition frequency f
T
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(1.0)
2.4
±0.2
0.45
±0.05
■
Features
(1.5)
Rating
250
Unit
V
1.0
±0.1
(0.85)
400
200
V
3
2
1
1.25
±0.05
0.55
±0.1
400
5
(2.5)
(2.5)
V
70
mA
°C
1: Base
2: Collector
3: Emitter
M-A1 Package
600
150
mW
°C
−55
to
+150
Conditions
Min
200
Typ
Max
Unit
V
I
C
=
100
µA,
I
B
=
0
I
E
=
10
µA,
I
C
=
0
400
5
V
EBO
I
CEO
h
FE *
V
co
V
CE
=
100 V, I
B
=
0
2
µA
V
is
V
CE
=
10 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
30
220
1.2
10
V
CB
=
10 V, I
E
= −10
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
50
MHz
pF
an
Q
R
60 to 150
100 to 220
Note) The part numbers in the parenthesis show conventional part number.
SJC00195BED
4.1
±0.2
4.5
±0.1
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
–
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–
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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Electric Industrial Co., Ltd.
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