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2SD859Q

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size239KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SD859Q Overview

Transistor

2SD859Q Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD859
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 250V(Min)
·High
Collector Power Dissipation
APPLICATIONS
·Designed
for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
350
V
250
V
5
V
0.75
A
1.5
A
35
W
150
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

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Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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