INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD859
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 250V(Min)
·High
Collector Power Dissipation
APPLICATIONS
·Designed
for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
350
V
250
V
5
V
0.75
A
1.5
A
35
W
150
℃
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD859
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 30mA; I
B
= 0
250
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 1A; I
B
= 0.2A
B
1.0
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1A; V
CE
= 10V
1.5
V
I
CEO
Collector Cutoff Current
V
CE
= 150V; I
B
= 0
1
mA
I
CES
Collector Cutoff Current
V
CE
= 350V; V
BE
= 0
1
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
Switching Times
t
on
Turn-On Time
w
P
.cn
i
em
cs
.is
w
w
V
EB
= 5V; I
C
= 0
I
C
= 0.3A; V
CE
= 10V
40
I
C
= 1A; V
CE
= 10V
10
I
C
= 1A; I
B1
= -I
B2
= 0.1A
1
mA
250
0.2
μs
t
off
Turn-Off Time
2.0
μs
h
FE-1
Classifications
R
40-90
Q
70-150
120-250
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
EEWORLD
