W963L6ABN
512K WORD
×
16 BIT LOW POWER PSEUDO SRAM
Table of Contents-
1. GENERAL DESCRIPTION.................................................................................................................. 3
2. FEATURES ......................................................................................................................................... 3
3. PRODUCT OPTIONS ......................................................................................................................... 3
4. BALL CONFIGURATION .................................................................................................................... 4
5. BALL DESCRIPTION .......................................................................................................................... 4
6. BLOCK DIAGRAM .............................................................................................................................. 5
7. FUNCTION TRUTH TABLE ................................................................................................................ 6
8. ELECTRICAL CHARACTERISTICS ................................................................................................... 7
Absolute Maximum Ratings .............................................................................................................. 7
Recommended Operating Conditions............................................................................................... 7
Capacitance ...................................................................................................................................... 8
DC Characteristics ............................................................................................................................ 8
AC Characteristics ............................................................................................................................ 9
Read Operation ..........................................................................................................................................9
Write Operation.........................................................................................................................................11
P
ower
D
own
and P
ower
D
own
P
rogram
P
arameters ............................................................................13
Other Timing Parameters .........................................................................................................................13
AC Test Conditions...................................................................................................................................13
9. TIMING WAVEFORMS ..................................................................................................................... 14
Read Timing #1 (
OE
Control Access)........................................................................................... 14
Read Timing #2 (
CE1
Control Access) ......................................................................................... 15
Read Timing #3 (Address Access after
OE
Control Access)....................................................... 16
Read Timing #4 (Address Access after
CE1
Control Access) ..................................................... 17
Write Timing #1 (
CE1
Control) ...................................................................................................... 18
Write Timing #2-1 (
WE
Control, Single Write Operation) ............................................................. 19
Write Timing #2 (
WE
Control, Continuous Write Operation)......................................................... 20
Read/Write Timing #1-1 (
CE1
Control) .......................................................................................... 21
Read/Write Timing #1-2 (
CE1
Control) .......................................................................................... 22
Publication Release Date: March 11, 2003
Revision A1
-1-
W963L6ABN
Read (
OE
Control) / Write (
WE
Control) Timing #2-1................................................................. 23
Read (
OE
Control) / Write (
WE
Control) Timing #2-2................................................................. 24
Power Down Program Timing ......................................................................................................... 25
Power Down Entry and Exit Timing................................................................................................. 25
Power-up Timing #1 ........................................................................................................................ 25
Power-up Timing #2 ........................................................................................................................ 26
Standby Entry Timing after Read or Write ...................................................................................... 26
Data Retention ................................................................................................................................ 27
Low V
DD
Characteristics...........................................................................................................................27
Data Retention Timing ..............................................................................................................................27
10. PACKAGE DIMENSION.................................................................................................................. 28
TFBGA 48 Balls (6 x 8 mm^2, pitch 0.75 mm)................................................................................ 28
11. ORDERING INFORMATION........................................................................................................... 29
12. VERSION HISTORY ....................................................................................................................... 30
-2-
W963L6ABN
1. GENERAL DESCRIPTION
W963L6ABN is a 8M bits CMOS pseudo static random access memory (Pseudo SRAM), organized
as 512K words x 16 bits. Using advanced single transistor DRAM architecture and 0.175
µm
process
technology; W963L6ABN delivers fast access cycle time and low power consumption. It is suitable for
mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and
power dissipation is most concerned.
2. FEATURES
•
Asynchronous SRAM interface
•
Fast access cycle time:
•
Wide operating conditions:
−
V
DD
= +2.3V to +2.7V or
+2.7V to +3.3V
•
Temperature
−
t
RC
= 70 nS (-70), 80 nS (-80)
•
Low power consumption:
−
I
DDA1
= 20 mA Max.
−
I
DDS1
= 70
µA
Max.
•
Byte write control
−
T
A
= 0°C to +70°C
−
T
A
= -25°C to +85°C (Extended temperature)
−
T
A
= -40°C to +85°C (Industrial temperature)
3. PRODUCT OPTIONS
PARAMETER
W963L6ABN70
W963L6ABN80
t
RC
I
DDS1
I
DDA1
V
DD
70 nS Min.
70
µA
Max.
20 mA
2.3V to 2.7V
2.7V to 3.3V
80 nS Min.
70
µA
Max.
20 mA
2.3V to 2.7V
2.7V to 3.3V
-3-
Publication Release Date: March 11, 2003
Revision A1
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