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BUK765R0-100E,118

Description
N-channel TrenchMOS standard level FET
File Size209KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK765R0-100E,118 Overview

N-channel TrenchMOS standard level FET

D2
PA
K
BUK765R0-100E
N-channel TrenchMOS standard level FET
Rev. 2 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding
environments due to 175 °C rating
True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
12V, 24V and 48V Automotive
systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C; see
Figure 13;
see
Figure 14
[1]
Min
-
-
-
-
Typ
-
-
-
3.9
Max
100
120
357
5
Unit
V
A
W
mΩ
Static characteristics
Dynamic characteristics
Q
GD
-
65
-
nC
[1]
Continuous current is limited by package.

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