DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
Product specification
Supersedes data of 1995 Sep 12
1999 Aug 24
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
lfpage
BFG35
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
up to T
s
= 135
C
(note 1)
I
C
= 100 mA; V
CE
= 10 V; T
j
= 25
C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
open base
CONDITIONS
MIN.
25
TYP.
70
4
15
11
750
MAX.
18
150
1
GHz
dB
dB
mV
UNIT
V
mA
W
maximum unilateral power gain I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
V
o
output voltage
I
C
= 100 mA; V
CE
= 10 V;
d
im
=
60
dB; R
L
= 75
;
f
(p+qr)
= 793.25 MHz; T
amb
= 25
C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 135
C
(note 1)
open emitter
open base
open collector
CONDITIONS
MIN.
65
MAX.
25
18
2
150
1
+150
175
UNIT
V
V
V
mA
W
C
C
1999 Aug 24
2
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 100 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
V
o
d
2
output voltage
second order intermodulation
distortion
note 2
note 3
note 4
note 5
MIN.
25
TYP.
70
2
10
1.2
4
15
11
750
800
55
57
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 135
C
(note 1)
VALUE
40
BFG35
UNIT
K/W
MAX.
1
UNIT
A
pF
pF
pF
GHz
dB
dB
mV
mV
dB
dB
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
s
21 2
=
10 log -------------------------------------------------------- dB.
1
–
s
11 2
1
–
s
22 2
2. d
im
=
60
dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
;
T
amb
= 25
C
V
p
= V
o
at d
im
=
60
dB; f
p
= 795.25 MHz;
V
q
= V
o
6
dB; f
q
= 803.25 MHz;
V
r
= V
o
6
dB; f
r
= 805.25 MHz;
measured at f
(p+qr)
= 793.25 MHz.
3. d
im
=
60
dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
;
T
amb
= 25
C
V
p
= V
o
at d
im
=
60
dB; f
p
= 445.25 MHz;
V
q
= V
o
6
dB; f
q
= 453.25 MHz;
V
r
= V
o
6
dB; f
r
= 455.25 MHz;
measured at f
(p+qr)
= 443.25 MHz.
4. I
C
= 60 mA; V
CE
= 10 V; R
L
= 75
;
V
p
= V
q
= V
o
= 50 dBmV;
f
(p+q)
= 450 MHz; f
p
= 50 MHz; f
q
= 400 MHz.
5. I
C
= 60 mA; V
CE
= 10 V; R
L
= 75
;
V
p
= V
q
= V
O
= 50 dBmV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
1999 Aug 24
3
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
handbook, full pagewidth
;; ;;
;;
L6
C4
C5
VBB
L5
C3
L3
C6
R1
R2
input
75
Ω
C1
L1
L2
L4
DUT
C7
C2
R3
R4
MBB284
VCC
output
75
Ω
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit)
DESIGNATION
C1, C3, C5, C6
C2, C7
C4 (note 1)
L1
L2
L3 (note 1)
L4
L5
L6 (note 1)
R1
R2 (note 1)
R3, R4
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (
r
= 2.2);
thickness
1
16
inch; thickness of copper sheet
1
32
inch.
DESCRIPTION
multilayer ceramic capacitor
multilayer ceramic capacitor
miniature ceramic plate capacitor
microstrip line
microstrip line
1.5 turns 0.4 mm copper wire
microstripline
Ferroxcube choke
0.4 mm copper wire
metal film resistor
metal film resistor
metal film resistor
75
5
H
25
nH
10 k
200
27
length 30 mm
2322 180 73103
2322 180 73201
2322 180 73279
VALUE
10 nF
1 pF
10 nF
75
75
length 7mm;
width 2.5 mm
length 22mm;
width 2.5 mm
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm;
width 2.5 mm
3122 108 20153
DIMENSIONS
CATALOGUE NO.
2222 590 08627
2222 851 12108
2222 629 08103
1999 Aug 24
4
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
handbook, full pagewidth
VBB
C3
VCC
C5
R1
R3
L3
L5
75
Ω
input
C1
L1
C2
R2
R4
L6
C4
L2
C6
L4
C7
75
Ω
output
MBB299
handbook, full pagewidth
80 mm
60 mm
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation test circuit printed circuit board.
1999 Aug 24
5
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