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IR2102C

Description
Half Bridge Based MOSFET Driver
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size179KB,15 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IR2102C Overview

Half Bridge Based MOSFET Driver

IR2102C Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
Data Sheet No. PD65002
IR2101C/IR2102C
HIGH AND LOW SIDE DRIVERDIE IN WAFER FORM
Features
100 % Tested at Probe
Available in Chip Pack, Unsawn Wafer, Sawn on Film
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs (IR2101) or out
of phase with inputs (IR2102)
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
up to 600V
V
CC
TO
LOAD
HIN
LIN
COM
IR2101
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
(Refer to the Die Outlines for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
IR2102
Note:
This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized
processes. Due to restrictions in die level processing, die may not be equivalent to standard package products and are
therefore offered with a conditional performance guarantee. The above data sheet is based on IR sample testing under
certain predetermined and assumed conditions, and are provided for illustration purposes only. Customers are encouraged
to perform testing in actual proposed packaged and use conditions. IR die products are tested using IR-based quality
assurance procedures and are manufactured using IR’s established processes. Programs for customer-specified testing
are available upon request. IR has experienced assembly yields of generally 95% or greater for individual die; however,
customer’s results will vary. Estimates such as those described and set forth in this data sheet for semiconductor die will
vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent
basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable
standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale,
which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be
carried out or product can be purchased as known good die.
Part number shown is for die in wafer. Contact factory for these other options.
www.irf.com
1

IR2102C Related Products

IR2102C IR2101C
Description Half Bridge Based MOSFET Driver Half Bridge Based MOSFET Driver, CMOS,
Maker Infineon Infineon
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Interface integrated circuit type HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
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