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IDT7169S25TDB

Description
Standard SRAM, 8KX9, 25ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28
Categorystorage    storage   
File Size192KB,7 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT7169S25TDB Overview

Standard SRAM, 8KX9, 25ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28

IDT7169S25TDB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instruction0.300 INCH, CERDIP-28
Contacts28
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-GDIP-T28
JESD-609 codee0
length37.211 mm
memory density73728 bit
Memory IC TypeSTANDARD SRAM
memory width9
Number of functions1
Number of ports1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX9
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height5.08 mm
Maximum standby current0.02 A
Minimum standby current4.5 V
Maximum slew rate0.19 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width7.62 mm
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