MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16A, BCR16B, BCR16C, BCR16E
OUTLINE DRAWING
Dimensions
in mm
3
φ2.0
MIN
1
φ2.0
MIN
14 MAX
3
1
φ8.7
MAX
2
2
φ11.1
MAX
• I
T (RMS)
...................................................................... 16A
• V
DRM
..............................................................400V/500V
• I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE TERMINAL
BCR16A
APPLICATION
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,
on/off control of traffic signals, on/off control of copier lamps,
solid state relay, microwave ovens
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
600
10
500
700
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Conditions
Commercial frequency, sine full
wave, 360° conduction
BCR16A, B, C
BCR16E
T
c
=99°C
T
b
=71°C
3 MAX
6.5 MAX
Unit
A
A
A
2
s
W
W
V
A
°C
16
5
10
2
Ratings
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
170
121
0.5
–20 ~ +125
V1.
Gate open.
Feb.1999
19 MAX
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
T
stg
Parameter
Storage temperature
BCR16A
—
Weight (Typical value)
BCR16B
BCR16C
BCR16E
—
—
V
iso
Soldering temperature
Mounting torque
Isolated voltage
BCR16A only, 10 sec.
BCR16C only (Typical value)
BCR16E only, T
a
=25°C, AC 1 minute, T
2
Terminal to base
Test conditions
Ratings
–20 ~ +125
3.0
8.5
8.5
9.5
230
30
2.94
1500
°C
kg·cm
N·m
V
g
Unit
°C
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-b)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, T
b
=25°C (BCR16E only), I
TM
=25A , Instantaneous
measurement
Limits
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0
1.6
1.5
1.5
1.5
30
30
30
—
1.2
2.5
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
—
—
0.2
—
—
V3
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Junction to case (BCR16A, BCR16B, BCR16C)
Junction to base (BCR16E)
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage
class
V
DRM
(V)
(dv/dt)
c
Symbol
R
Min.
—
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
8
400
L
10
V/µs
R
—
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–8A/ms
3. Peak off-state voltage
V
D
=400V
L
10
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
10
500
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR16B
2-φ3.2 MIN
20 MAX
Dimensions
in mm
BCR16C
2-φ3.2 MIN
BCR16E
5.3 MAX
20 MAX
21 MAX
Feb.1999
22 MAX
1
3
23±0.2
33 MAX
(16.2)
1
φ2.5
MIN
φ2.0
MIN
16 MAX
14
2
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE TERMINAL
3
φ2.0
MIN
15.5 MAX
1
3
φ2.0
MIN
10 MAX 16 MAX
1.9 MAX
(φ16)
23±0.2
φ33
MAX
2
8.5 MAX
3 MIN
21 MAX
1
φ2.0
MIN
1.8
MAX
10 MAX
1.8 MAX
8 MAX
20.5 MAX
φ8.7
MAX
φ8.7
MAX
3
φ8.7
MAX
2
M6×1.0
2
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
3
7 T
C
= 25°C
5 T
b
= 25°C
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
10
1
7
5
3 V
GT
= 1.5V
2
10
0
7
5
3
2
P
GM
= 5.0W
I
GM
= 2A
GATE TRIGGER CURRENT • VOLTAGE (T
j
= t°C)
GATE TRIGGER CURRENT • VOLTAGE (T
j
= 25°C)
3
2 V
GM
= 10V
P
G(AV)
= 0.5W
100 (%)
GATE CHARACTERISTICS
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
200
TEST PROCEDURE
Ι, ΙΙ
AND
ΙΙΙ
180
160
140
120
100
80
60 GATE TRIGGER
VOLTAGE
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE) (BCR16A, B, C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO BASE) (BCR16E)
TRANSIENT THERMAL IMPEDANCE (°C/W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
1.6
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ON-STATE POWER DISSIPATION (W)
40
360°
CONDUCTION
25 RESISTIVE,
INDUCTIVE
20 LOADS
30
15
10
5
0
0
2
4
6
8 10 12 14 16 18 20
CASE TEMPERATURE (°C)
35
140
120
100
BCR16A, BCR16B,
80 BCR16C
60
BCR16E
40 360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE LOADS
0
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16A)
160
160 160 t4.0
140
120 120 t3.0
120
80 80 t2.0
ALL FINS ARE
100
80
60
40
20
0
BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
: MOUNTING ON FIN
WITH SOLDER
: MOUNTING PLATE
WITHOUT GREASE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16B)
160
140
120
100
80
60
40
20
0
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: INSULATED PLATE
WITH GREASE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
160 160 t4.0
120 120 t3.0
80 80 t2.0
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16C)
160
AMBIENT TEMPERATURE (°C)
140
120
100
80
AMBIENT TEMPERATURE (°C)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL
160 160
CONVECTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16E)
160
140
120
100
80
60
40
CURVES APPLY
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION
t4.0
120 120 t3.0
80 80 t2.0
160 160 t4.0
120 120 t3.0
80 80 t2.0
60
REGARDLESS
40
20
0
CURVES APPLY
OF CONDUCTION
ANGLE
: MOUNTING ON FIN
WITH GREASE
: MICA PLATE
WITH GREASE
20
REGARDLESS
OF CONDUCTION
0
ANGLE
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Feb.1999
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