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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> BT145B-800R
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BT145B-800R

Description
Silicon Controlled Rectifier, 25 A, 800 V, SCR
CategoryAnalog mixed-signal IC    Trigger device   
File Size40KB，6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BT145B-800R Overview

Silicon Controlled Rectifier, 25 A, 800 V, SCR

BT145B-800R Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
Shell connectionANODE
Nominal circuit commutation break time70 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current35 mA
Maximum DC gate trigger voltage1 V
Maximum holding current60 mA
JESD-30 codeR-PSSO-G2
Maximum leakage current1 mA
On-state non-repetitive peak current330 A
Number of components1
Number of terminals2
Maximum on-state current16000 A
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum rms on-state current25 A
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Trigger device typeSCR

BT145B-800R Preview

Philips Semiconductors
Product specification
Thyristors
BT145B series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT145B-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500R
500
16
25
300
600R
600
16
25
300
800R
800
16
25
300
V
A
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
mb
SYMBOL
a
2
1
3
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
mb
≤
101 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 50 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
500
1
600
1
800
16
25
300
330
450
200
5
5
5
20
0.5
150
125
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
May 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT145B series
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
TYP.
-
55
MAX.
1.0
-
UNIT
K/W
K/W
Thermal resistance
junction to mounting base
Thermal resistance
minimum footprint, FR4 board
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
, I
R
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 30 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
5
25
20
1.1
0.6
0.4
0.2
MAX.
35
80
60
1.5
1.0
-
1.0
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
t
gt
t
q
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
I
TM
= 40 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C;
I
TM
= 50 A; V
R
= 25 V; dI
TM
/dt = 30 A/µs;
dV
D
/dt = 50 V/µs
MIN.
200
-
-
TYP.
500
2
70
MAX.
-
-
-
UNIT
V/µs
µs
µs
May 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT145B series
25
Ptot / W
conduction form
angle
factor
degrees
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
BT145
1.9
2.2
2.8
4
Tmb(max) / C
100
a = 1.57
105
350
300
250
ITSM / A
BT145
IT
ITSM
20
time
T
Tj initial = 25 C max
15
110
200
150
100
10
115
5
120
50
0
0
5
10
IF(AV) / A
15
125
20
0
1
10
100
Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where a = form
factor = I
T(RMS)
/ I
T(AV)
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
10000
ITSM / A
BT145
50
IT(RMS) / A
BT145
40
30
1000
IT
T
dI
T
/dt limit
ITSM
time
20
10
Tj initial = 25 C max
100
10us
100us
T/s
1ms
10ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
BT145
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
101˚C.
VGT(Tj)
VGT(25 C)
30
25
20
15
10
5
IT(RMS) / A
1.6
101 C
BT151
1.4
1.2
1
0.8
0.6
0
50
Tmb / C
100
150
0
-50
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
May 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT145B series
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
BT145
50
IT / A
Tj = 125 C
Tj = 25 C
BT145
40
Vo = 1.045 V
Rs = 0.011 ohms
30
typ
max
20
1
10
0.5
0
-50
0
0
0.5
1
VT / V
1.5
2
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
BT145
10
Zth j-mb (K/W)
BT145
1
0.1
P
D
tp
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25 C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dVD/dt (V/us)
3
2.5
2
1.5
1
0.5
BT145
10000
1000
gate open circuit
100
0
-50
0
50
Tj / C
100
150
10
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
May 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT145B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
May 1997
5
Rev 1.000
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BT145B-800R Related Products

BT145B-800R BT145B-500R BT145B-600R
Description Silicon Controlled Rectifier, 25 A, 800 V, SCR Silicon Controlled Rectifier, 25 A, 500 V, SCR Silicon Controlled Rectifier, 25 A, 600 V, SCR
Maker NXP NXP NXP
Reach Compliance Code compliant compliant compliant
Shell connection ANODE ANODE ANODE
Nominal circuit commutation break time 70 µs 70 µs 70 µs
Configuration SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us 200 V/us
Maximum DC gate trigger current 35 mA 35 mA 35 mA
Maximum DC gate trigger voltage 1 V 1 V 1 V
Maximum holding current 60 mA 60 mA 60 mA
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Maximum leakage current 1 mA 1 mA 1 mA
On-state non-repetitive peak current 330 A 330 A 330 A
Number of components 1 1 1
Number of terminals 2 2 2
Maximum on-state current 16000 A 16000 A 16000 A
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 25 A 25 A 25 A
Off-state repetitive peak voltage 800 V 500 V 600 V
Repeated peak reverse voltage 800 V 500 V 600 V
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Trigger device type SCR SCR SCR

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