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2SB562B

Description
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC TO-92L, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size213KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
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2SB562B Overview

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC TO-92L, 3 PIN

2SB562B Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)85
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SB562
Features
x
x
Low Frequency Power Amplifier.
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Complementary pair with 2SD468
PNP Epitaxial
Silicon Transistor
TO-92L
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-Base Breakdown Voltage
(I
C
=-10 Adc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=-1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=-0.01mAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-20Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=-4.0Vdc, I
C
=0)
Rating
-20
-25
-5.0
-1.0
0.9
-55 to +150
-55 to +150
Min
-20
-25
-5.0
---
---
Typ
---
---
---
---
---
Max
---
---
---
-1000
-1000
Unit
V
V
V
A
W
O
C
O
C
Units
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Vdc
Vdc
Vdc
nAdc
nAdc
B
C
E
ON CHARACTERISTICS
DC Current gain
(I
C
=500mAdc, V
CE
=2.0Vdc)
V
BE(on)
Base-Emitter On Voltage
(V
CE
=-2.0Vdc, I
C
=-500mAdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=-0.8Adc, I
B
=-80mAdc)
f
T
Current Gain Bandwidth Product
(V
CE
=-2.0Vdc, I
C
=-500mAdc)
C
ob
Output Capacitance
(V
CB
=-10Vdc, I
E
=0, f=1.0MHz)
(1) h
FE
Classification B: 85~170, C: 120~240
h
FE
85
---
---
---
---
---
---
---
350
38
240
-1.0
-0.5
---
---
---
Vdc
Vdc
MHz
pF
DIM
A
B
C
D
E
F
G
H
J
K
L
M
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
3.700
4.10
.146
.161
4.000
---
.157
---
---
0.063
---
1.600
0.350
0.450
.014
.018
.050
.062
1.280
1.580
4.700
5.100
.185
.201
.307
.323
7.800
8.200
13.80
14.20
.543
.559
.600
.800
.024
.031
.014
.050
.096
.104
2.440
.022
0.350
1.270
2.640
.550
NOTE
www.mccsemi.com
Revision:
1
1 of
4
2009/04/24

2SB562B Related Products

2SB562B 2SB562C 2SB562
Description Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC TO-92L, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC TO-92L, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC TO-92L, 3 PIN
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 85 120 85
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 350 MHz 350 MHz 350 MHz
Base Number Matches 1 1 1
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