2SC3199-O-C datasheet, PDF - EEWORLD Datasheet

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2SC3199-O-C: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), NPN; CategoryDiscrete semiconductor The transistor; File Size562KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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2SC3199-O-C Overview

Small Signal Bipolar Transistor, 0.15A I(C), NPN

2SC3199-O-C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.4 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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2SC3199

Elektronische Bauelemente

0.15 A , 50 V

NPN Plastic-Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



TO-92S

REF.

A

B

C

D

E

F

G

H

J

K

L

Millimeter

Min.

Max.

3.90

4.10

3.05

3.25

1.42

1.62

15.1

15.5

2.97

3.27

0.66

0.86

2.44

2.64

1.27 REF.

0.36

0.48

0.36

0.51

45°

High Current Capability

High DC Current Gain

Small Package

APPLICATIONS



Audio Amplifier Applications

AM Amplifier Applications

CLASSIFICATION OF h

FE

Product-Rank

Range

2SC3199-O

70~140

2SC3199-Y

120~240

2SC3199-GR

200~400

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

J

, T

STG

Rating

50

5

150

400

312

150, -55~150

Unit

V

mA

mW

°C / W

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

Emitter Cut – Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Collector Output Capacitance

Transition Frequency

http://www.SeCoSGmbH.com/

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

C

ob

f

T

Min.

50

5

-

70

-

80

Typ.

-

Max.

-

0.1

400

0.25

3.5

-

Unit

V

μA

Test Condition

I

C

=0.1mA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=0.1mA, I

C

=0

V

CB

=50V, I

E

=0

V

EB

=5V, I

C

=0

V

CE

=6V, I

C

=2mA

V

pF

MHz

I

C

=100mA, I

B

=10mA

V

CB

=10V, I

E

=0, f=1MHz

V

CE

=10V, I

C

=1mA

Any changes of specification will not be informed individually.

22-Aug-2013 Rev. E

Page 1 of 3

2SC3199-O-C Related Products

	2SC3199-O-C	2SC3199-GR-C	2SC3199-GR	2SC3199-Y	2SC3199-Y-C	2SC3199-O	2SC3199-C
Description	Small Signal Bipolar Transistor, 0.15A I(C), NPN	Small Signal Bipolar Transistor, 0.15A I(C), NPN	Small Signal Bipolar Transistor, 0.15A I(C), NPN	Small Signal Bipolar Transistor, 0.15A I(C), NPN	Small Signal Bipolar Transistor, 0.15A I(C), NPN	Small Signal Bipolar Transistor, 0.15A I(C), NPN	Small Signal Bipolar Transistor
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	200	200	120	120	70	70
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1	1	1	1	1
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Maximum power dissipation(Abs)	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	-

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