2SJ259DR datasheet, PDF - EEWORLD Datasheet

2SJ259DR: DescriptionPower Field-Effect Transistor, 20A I(D), 30V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size252KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SJ259DR Overview

Power Field-Effect Transistor, 20A I(D), 30V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Objectid	1454194466
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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