2SK2160-YB datasheet, PDF - EEWORLD Datasheet

2SK2160-YB: DescriptionPower Field-Effect Transistor, 7A I(D), 200V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size80KB，1 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK2160-YB Overview

Power Field-Effect Transistor, 7A I(D), 200V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Parameter Name	Attribute value
Objectid	1412362252
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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