Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1226 2SC1226A
DESCRIPTION
·With
TO-202 package
·Complement
to type 2SA699/699A
APPLICATIONS
·For
medium power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-202) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2SC1226
V
CBO
Collector-base voltage
2SC1226A
2SC1226
V
CEO
Collector-emitter voltage
2SC1226A
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
40
5
2
3
0.6
10
150
-55~150
V
A
A
A
W
℃
℃
Open emitter
50
32
V
CONDITIONS
VALUE
40
V
UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC1226
I
C
=1mA;I
E
=0
2SC1226A
2SC1226
I
C
=10mA; I
B
=0
2SC1226A
I
CBO
I
CEO
I
EBO
h
FE
C
OB
f
T
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
V
CB
=20V; I
E
=0
V
CE
=12V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
E
=0; V
CB
=5V;f=1MHz
I
E
=0.5A ; V
CB
=5V
CONDITIONS
I
C
=2A ;I
B
=0.2 A
I
C
=2A ;I
B
=0.2 A
2SC1226 2SC1226A
MIN
TYP.
0.4
MAX
1.0
1.5
UNIT
V
V
V
(BR)CBO
Collector-base
breakdown voltage
40
V
50
32
V
40
1
100
100
50
50
150
220
pF
MHz
μA
μA
μA
V
(BR)CEO
Collector-emitter
breakdown voltage
h
FE
classifications
P
50-100
Q
80-160
R
100-220
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1226 2SC1226A
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1226 2SC1226A
4
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1226 2SC1226A
5
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