Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Features
•
–6 A, –12 V.
R
DS(ON)
= 26 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 35 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 53 mΩ @ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Battery protection
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
D
D
S
1
2
G
6
5
4
SuperSOT -6
TM
D
D
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–12
±8
(Note 1a)
Units
V
V
A
W
°C
–6
–20
1.6
0.8
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.606
Device
FDC606P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
FDC606P Rev E (W)
FDC606P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= –250
µA
Min
–12
Typ
Max Units
V
Off Characteristics
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –10 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
–0.4
–0.5
2.5
21
26
34
28
–20
25
1699
679
423
11
10
89
70
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –6 A,
18
3
4.2
–1.3
(Note 2)
–3
–1
100
–100
–1.5
mV/°C
µA
nA
nA
V
mV/°C
26
35
53
35
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –4.5 V, I
D
= –6 A
V
GS
= –2.5 V, I
D
= –5 A
V
GS
= –1.8 V, I
D
= –4 A
V
GS
= –4.5 V, I
D
= –6 A,T
J
=125°C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –6 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
A
S
pF
pF
pF
19
20
142
112
25
ns
ns
ns
ns
nC
nC
nC
A
V
Dynamic Characteristics
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1.3 A
–0.6
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
2
78°C/W when mounted on a 1in pad of 2oz copper on FR-4 board.
a.
b.
156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDC606P Rev E (W)
FDC606P
Typical Characteristics
20
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -4.5V
-3.0V
-I
D
, DRAIN CURRENT (A)
15
-2.5V
2.6
-1.8V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
5
10
-I
D
, DRAIN CURRENT (A)
V
GS
=-1.5V
10
-1.5V
-1.8V
-2.0V
-2.5V
-3.0V
-4.5V
15
20
5
0
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
1.3
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.2
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -6A
V
GS
= -4.5V
I
D
= -3A
0.07
0.06
0.05
1.1
T
A
= 125
o
C
0.04
0.03
0.02
0.01
1
0.9
T
A
= 25
o
C
0.8
-50
-25
0
25
50
75
100
o
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
20
125
o
C
-I
D
, DRAIN CURRENT (A)
15
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
T
A
= -55
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
1
0.1
-55
o
C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
10
5
0
0.5
0.75
1
1.25
1.5
1.75
2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC606P Rev E (W)
FDC606P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
2500
I
D
= -6A
V
DS
= -4V
-6V
2000
CAPACITANCE (pF)
-8V
C
ISS
f = 1 MHz
V
GS
= 0 V
4
3
1500
C
OSS
1000
C
RSS
500
2
1
0
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
0
0
3
6
9
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
1s
DC
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 156
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100µs
10
Figure 8. Capacitance Characteristics.
8
SINGLE PULSE
R
θJA
= 156°C/W
T
A
= 25°C
6
1
4
0.1
2
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 156 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC606P Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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