Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–6 A, –12 V. R
DS(ON)
= 18 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 22 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 30 mΩ @ V
GS
= –1.8 V
Low gate charge(26nC typical)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
Applications
•
•
•
Power management
Load switch
Battery protection
•
•
•
G2
S2
S2
D2
G1
S1
S1
D1
Pin 11
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–12
±8
(Note 1)
Units
V
V
A
W
°C
–6
–30
1.3
1
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
100
125
°C/W
Package Marking and Ordering Information
Device Marking
2508P
Device
FDW2508P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor Corporation
FDW2508P Rev. E (W)
2
FDW2508P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= –250
µA
Min
–12
Typ
Max Units
V
Off Characteristics
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –10 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
–0.4
–0.5
2.7
14
17
22
18
–30
32
2644
987
602
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
18
22
30
25
–2
–1
100
–100
–1.5
mV/°C
µA
nA
nA
V
mV/°C
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V, I
D
= –6 A
V
GS
= –2.5 V, I
D
= –5 A
V
GS
= –1.8 V, I
D
= –4 A
V
GS
= –4.5 V, I
D
= –6A, T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
V
DS
= –6 V,
f = 1.0 MHz
I
D
= –6 A
V
GS
= 0 V,
I
D(on)
g
FS
C
iss
C
oss
C
rss
A
S
pF
pF
pF
Dynamic Characteristics
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
14
9.1
122
89
25
18
195
142
36
ns
ns
ns
ns
nC
nC
nC
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –6 A,
26
4
7
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1.1 A
(Note 2)
–1.1
–0.59
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
b)
R
θJA
is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
R
θJA
is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4.
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Embedded System
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