Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
| Parameter Name | Attribute value |
| Maker | Fuji Electric Co., Ltd. |
| package instruction | FLANGE MOUNT, R-XUFM-X17 |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 75 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| JESD-30 code | R-XUFM-X17 |
| Number of components | 6 |
| Number of terminals | 17 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 450 ns |
| Nominal on time (ton) | 350 ns |
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