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KTA1298Y

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size146KB,2 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric Compare View All

KTA1298Y Overview

Transistor

KTA1298Y Parametric

Parameter NameAttribute value
MakerShandong Yiguang Electronic Joint Stock Co., Ltd.
package instruction,
Reach Compliance Codeunknown

KTA1298Y Preview

SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
KTA1298
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
*
Complement to KTC3265
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
-35
-30
-5
-800
200
150
-65-150
Unit
V
V
V
mA
mW
Package:
SOT-23
PIN:
STYLE
NO.1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Cutoff Current
Gain Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
H
FE
Vce(sat)
Icbo
fT
120
Min
-35
-30
-5
100
-0.4
-100
320
V
nA
MHz
Typ
Max
Unit
V
V
V
Test Conditions
Ic= -10uA Ie=0
Ic= -1mA Ib=0
Ie= -10uA Ic=0
Vce= -1V Ic= -100mA
Ic= -500mA Ib= -20mA
Vcb= -30V
Vce= -5V Ic= -10mA
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
KTA1298=1G
CLASSIFICATION OF Hfe
(1)
Rank
Range
O
100—200
Y
160—320
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
KTA1298
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
KTA1298

KTA1298Y Related Products

KTA1298Y KTA1298O KTA1298
Description Transistor Transistor Transistor
Maker Shandong Yiguang Electronic Joint Stock Co., Ltd. Shandong Yiguang Electronic Joint Stock Co., Ltd. Shandong Yiguang Electronic Joint Stock Co., Ltd.
Reach Compliance Code unknown unknown unknown
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