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MRW2010

Description
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size302KB,5 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRW2010 Overview

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN

MRW2010 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Reach Compliance Codeunknown
Other featuresDIFFUSED BALLAST RESISTORS
Shell connectionBASE
Maximum collector current (IC)2 A
Collector-based maximum capacity12 pF
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandS BAND
JESD-30 codeO-CRFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Minimum power gain (Gp)7 dB
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

MRW2010 Related Products

MRW2010 MRW2001F
Description RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, S Band, Silicon, NPN
Maker Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown
Other features DIFFUSED BALLAST RESISTORS DIFFUSED BALLAST RESISTORS
Shell connection BASE BASE
Maximum collector current (IC) 2 A 0.25 A
Collector-based maximum capacity 12 pF 4 pF
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
highest frequency band S BAND S BAND
JESD-30 code O-CRFM-F2 O-CRDB-F2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form FLANGE MOUNT DISK BUTTON
Polarity/channel type NPN NPN
Minimum power gain (Gp) 7 dB 9 dB
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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