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MRW2001F

Description
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, S Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size302KB,5 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRW2001F Overview

RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, S Band, Silicon, NPN

MRW2001F Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionDISK BUTTON, O-CRDB-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresDIFFUSED BALLAST RESISTORS
Shell connectionBASE
Maximum collector current (IC)0.25 A
Collector-based maximum capacity4 pF
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandS BAND
JESD-30 codeO-CRDB-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Minimum power gain (Gp)9 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

MRW2001F Related Products

MRW2001F MRW2010
Description RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, S Band, Silicon, NPN RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
Maker Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown
Other features DIFFUSED BALLAST RESISTORS DIFFUSED BALLAST RESISTORS
Shell connection BASE BASE
Maximum collector current (IC) 0.25 A 2 A
Collector-based maximum capacity 4 pF 12 pF
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
highest frequency band S BAND S BAND
JESD-30 code O-CRDB-F2 O-CRFM-F2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON FLANGE MOUNT
Polarity/channel type NPN NPN
Minimum power gain (Gp) 9 dB 7 dB
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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