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FEATURES
+3 V, +5 V or 5 V Power Supplies
Ultralow Power Dissipation (<0.5 W)
Low Leakage (<100 pA)
Low On Resistance (<50 )
Fast Switching Times
Low Charge Injection
TTL/CMOS Compatible
16-Lead DIP or SOIC Package
LC MOS
Precision 5 V/3 V Quad SPST Switches
ADG511/ADG512/ADG513
FUNCTIONAL BLOCK DIAGRAMS
S1
IN1
D1
S2
IN2
IN2
D2
S3
IN3
D3
S4
IN4
D4
IN4
D4
D3
S4
IN4
D4
2
S1
IN1
D1
S2
IN2
IN1
S1
D1
S2
D2
S3
D3
S4
ADG511
IN3
ADG512
D2
S3
IN3
ADG513
APPLICATIONS
Battery Powered Instruments
Single Supply Systems
Remote Powered Equipment
+5 V Supply Systems
Computer Peripherals such as Disk Drives
Precision Instrumentation
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Sample Hold Systems
Communication Systems
Compatible with 5 V Supply DACs and ADCs such as
AD7840/8, AD7870/1/2/4/5/6/8
SWITCHES SHOWN FOR A LOGIC "1" INPUT
The ADG511, ADG512 and ADG513 contain four indepen-
dent SPST switches. The ADG511 and ADG512 differ only in
that the digital control logic is inverted. The ADG511 switch is
turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG512. The ADG513
contains two switches whose digital control logic is similar to
that of the ADG511 while the logic is inverted in the remaining
two switches.
PRODUCT HIGHLIGHTS
GENERAL DESCRIPTION
The ADG511, ADG512 and ADG513 are monolithic CMOS
ICs containing four independently selectable analog switches.
These switches feature low, well-controlled on resistance and
wide analog signal range, making them ideal for precision
analog signal switching.
These switch arrays are fabricated using Analog Devices’
advanced linear compatible CMOS (LC
2
MOS) process which
offers the additional benefits of low leakage currents, ultralow
power dissipation and low capacitance for fast switching speeds
with minimum charge injection. These features make the
ADG511, ADG512 and ADG513 the optimum choice for a
wide variety of signal switching tasks in precision analog signal
processing and data acquisition systems.
The ability to operate from single +3 V, +5 V or
±
5 V bipolar
supplies make the ADG511, ADG512 and ADG513 perfect for
use in battery-operated instruments, 4–20 mA loop systems and
with the new generation of DACs and ADCs from Analog
Devices. The use of 5 V supplies and reduced operating currents
give much lower power dissipation than devices operating from
±
15 V supplies.
1. +5 Volt Single Supply Operation
The ADG511/ADG512/ADG513 offers high performance,
including low on resistance and wide signal range, fully
specified and guaranteed with +3 V,
±
5 V as well as +5 V
supply rails.
2. Ultralow Power Dissipation
CMOS construction ensures ultralow power dissipation.
3. Low R
ON
4. Break-Before-Make Switching
Switches are guaranteed to have break-before-make opera-
tion. This allows multiple outputs to be tied together for
multiplexer applications without the possibility of momentary
shorting between channels.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999
ADG511/ADG512/ADG513–SPECIFICATIONS
1
Dual Supply
(V
Parameter
ANALOG SWITCH
Analog Signal Range
R
ON
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time
Delay, t
D
(ADG513 Only)
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
V
DD
V
SS
I
DD
I
SS
DD
= +5 V
10%, V
SS
= –5 V
10%, GND = 0 V, unless otherwise noted)
T Versions
–55 C to
+25 C
+125 C
V
DD
to V
SS
30
50
50
±
0.025
±
0.1
±
0.025
±
0.1
±
0.05
±
0.2
B Versions
–40 C to
+25 C
+85 C
V
DD
to V
SS
30
Units
V
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
D
=
±
3.5 V, I
S
= –10 mA;
V
DD
= +4.5 V, V
SS
= –4.5 V
V
DD
= +5.5 V, V
SS
= –5.5 V
V
D
=
±
4.5 V, V
S
= 4.5 V;
Test Circuit 2
V
D
=
±
4.5 V, V
S
= 4.5 V;
Test Circuit 2
V
D
= V
S
=
±
4.5 V;
Test Circuit 3
±
0.025
±
0.1
±
0.025
±
0.1
±
0.05
±
0.2
±
2.5
±
2.5
±
5
2.4
0.8
±
2.5
±
2.5
±
5
2.4
0.8
0.005
±
0.1
0.005
±
0.1
V
IN
= V
INL
or V
INH
200
375
120
150
100
11
68
85
9
9
35
+4.5/5.5
–4.5/–5.5
0.0001
1
0.0001
1
200
375
120
150
100
11
68
85
9
9
35
+4.5/5.5
–4.5/–5.5
0.0001
1
0.0001
1
R
L
= 300
Ω.
C
L
= 35 pF;
V
S
=
±
3 V; Test Circuit 4
R
L
= 300
Ω.
C
L
= 35 pF;
V
S
=
±
3 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF;
V
S1
= V
S2
= +3 V; Test Circuit 5
V
S
= 0 V, R
S
= 0
Ω,
C
L
= 10 nF;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
V min/max
V min/max
µA
typ
µA
max
µA
typ
µA
max
V
DD
= +5.5 V, V
SS
= –5.5 V
Digital Inputs = 0 V or 5 V
NOTES
1
Temperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. B
ADG511/ADG512/ADG513
Single Supply
(V
Parameter
ANALOG SWITCH
Analog Signal Range
R
ON
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time
Delay, t
D
(ADG513 Only)
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
V
DD
I
DD
DD
= +5 V
10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted)
B Versions
–40 C to
+25 C
+85 C
0 V to V
DD
45
75
±
0.025
±
0.1
±
0.025
±
0.1
±
0.05
±
0.2
±
0.025
±
0.1
±
0.025
±
0.1
±
0.05
±
0.2
45
75
T Versions
–55 C to
+25 C
+125 C
0 V to V
DD
Units
V
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
D
= +3.5 V, I
S
= –10 mA;
V
DD
= +4.5 V
V
DD
= +5.5 V
V
D
= 4.5/1 V, V
S
= 1 4.5 V;
Test Circuit 2
V
D
= 4.5/1 V, V
S
= 1 4.5 V;
Test Circuit 2
V
D
= V
S
= +4.5 V/+1 V;
Test Circuit 3
±
2.5
±
2.5
±
5
2.4
0.8
±
2.5
±
2.5
±
5
2.4
0.8
0.005
±
0.1
0.005
±
0.1
V
IN
= V
INL
or V
INH
250
500
50
100
200
16
68
85
9
9
35
+4.5/5.5
0.0001
1
250
500
50
100
200
16
68
85
9
9
35
+4.5/5.5
0.0001
1
R
L
= 300
Ω,
C
L
= 35 pF;
V
S
= +2 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF;
V
S
= +2 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF;
V
S1
= V
S2
= +2 V; Test Circuit 5
V
S
= 0 V, R
S
= 0
Ω,
C
L
= 10 nF;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
V min/max
µA
typ
µA
max
V
DD
= +5.5 V
Digital Inputs = 0 V or 5 V
NOTES
1
Temperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. B
–3–
Single Supply
(V
Parameter
ANALOG SWITCH
Analog Signal Range
R
ON
ADG511/ADG512/ADG513–SPECIFICATIONS
DD
1
= +3.3 V
10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted)
B Versions
0 C to
+25 C
+70 C
0 V to V
DD
200
500
Units
V
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
D
= +1.5 V, I
S
= –1 mA;
V
DD
= +3 V
V
DD
= +3.6 V
V
D
= 2.6/1 V, V
S
= 1 2.6 V;
Test Circuit 2
V
D
= 2.6/1 V, V
S
= 1 2.6 V;
Test Circuit 2
V
D
= V
S
= +2.6 V/+1 V;
Test Circuit 3
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time
Delay, t
D
(ADG513 Only)
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
V
DD
I
DD
±
0.025
±
0.1
±
0.025
±
0.1
±
0.05
±
0.2
±
2.5
±
2.5
±
5
2.4
0.8
0.005
±
0.1
V
IN
= V
INL
or V
INH
600
1200
100
160
500
11
68
85
9
9
35
3/3.6
0.0001
1
R
L
= 300
Ω,
C
L
= 35 pF;
V
S
= +1 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF;
V
S
= +1 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF;
V
S1
= V
S2
= +1 V; Test Circuit 5
V
S
= 0 V, R
S
= 0
Ω,
C
L
= 10 nF;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
V min/max
µA
typ
µA
max
V
DD
= +3.6 V
Digital Inputs = 0 V or 3 V
NOTES
1
Temperature ranges are as follows: B Versions –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–4–
REV. B
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