256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)

| HB56SW3272ESK | HB56SW3272ESK-5 | HB56SW3272ESK-6 | |
|---|---|---|---|
| Description | 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components) | 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components) | 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components) |
| Maker | - | Hitachi (Renesas ) | Hitachi (Renesas ) |
| Parts packaging code | - | DIMM | DIMM |
| package instruction | - | DIMM, DIMM168 | DIMM, DIMM168 |
| Contacts | - | 168 | 168 |
| Reach Compliance Code | - | unknow | unknow |
| ECCN code | - | EAR99 | EAR99 |
| access mode | - | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
| Maximum access time | - | 50 ns | 60 ns |
| Other features | - | RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM | RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM |
| I/O type | - | COMMON | COMMON |
| JESD-30 code | - | R-XDMA-N168 | R-XDMA-N168 |
| length | - | 133.35 mm | 133.35 mm |
| memory density | - | 134217728 bi | 134217728 bi |
| Memory IC Type | - | EDO DRAM MODULE | EDO DRAM MODULE |
| memory width | - | 4 | 4 |
| Number of functions | - | 1 | 1 |
| Number of ports | - | 1 | 1 |
| Number of terminals | - | 168 | 168 |
| word count | - | 33554432 words | 33554432 words |
| character code | - | 32000000 | 32000000 |
| Operating mode | - | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | - | 70 °C | 70 °C |
| organize | - | 32MX4 | 32MX4 |
| Output characteristics | - | 3-STATE | 3-STATE |
| Package body material | - | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | - | DIMM | DIMM |
| Encapsulate equivalent code | - | DIMM168 | DIMM168 |
| Package shape | - | RECTANGULAR | RECTANGULAR |
| Package form | - | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| power supply | - | 3.3 V | 3.3 V |
| Certification status | - | Not Qualified | Not Qualified |
| refresh cycle | - | 4096 | 4096 |
| Maximum seat height | - | 38.1 mm | 38.1 mm |
| Maximum standby current | - | 0.028 A | 0.028 A |
| Maximum slew rate | - | 2.44 mA | 2.08 mA |
| Maximum supply voltage (Vsup) | - | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | - | 3 V | 3 V |
| Nominal supply voltage (Vsup) | - | 3.3 V | 3.3 V |
| surface mount | - | NO | NO |
| technology | - | CMOS | CMOS |
| Temperature level | - | COMMERCIAL | COMMERCIAL |
| Terminal form | - | NO LEAD | NO LEAD |
| Terminal pitch | - | 1.27 mm | 1.27 mm |
| Terminal location | - | DUAL | DUAL |
| width | - | 4.8 mm | 4.8 mm |