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HB56SW3272ESK

Description
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
File Size231KB,29 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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HB56SW3272ESK Overview

256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)

HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM
32-Mword
×
72-bit, 4k Refresh, 2 Bank Module
(36 pcs of 16M
×
4 components)
ADE-203-872B (Z)
Rev. 1.0
June 23, 1998
Description
The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been
developed an optimized main memory solution for 4 and 8-byte processor applications. The
HB56SW3272ESK is 32 M
×
72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM
(HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP
package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access
mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out). Therefore, the
HB56SW3272ESK make high density mounting possible without surface mount technology. The
HB56SW3272ESK provide common data inputs and outputs. Decoupling capacitors are mounted beside
each TCP on its module board.
Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which
would be electrical defects.
Features
168-pin socket type package (Dual lead out)
Lead pitch : 1.27 mm
Single 3.3 V supply (±0.3 V)
High speed
Access time: t
RAC
= 50 ns/60 ns (max)
Access time: t
CAC
= 18 ns/20 ns (max)
Low power dissipation
Active mode: 8.78 W/7.49 W (max)
Standby mode (TTL): 295.2 mW (max)
JEDEC standard outline buffered 8-byte DIMM
Buffered input except
RAS
and DQ

HB56SW3272ESK Related Products

HB56SW3272ESK HB56SW3272ESK-5 HB56SW3272ESK-6
Description 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components) 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components) 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
Maker - Hitachi (Renesas ) Hitachi (Renesas )
Parts packaging code - DIMM DIMM
package instruction - DIMM, DIMM168 DIMM, DIMM168
Contacts - 168 168
Reach Compliance Code - unknow unknow
ECCN code - EAR99 EAR99
access mode - DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time - 50 ns 60 ns
Other features - RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM
I/O type - COMMON COMMON
JESD-30 code - R-XDMA-N168 R-XDMA-N168
length - 133.35 mm 133.35 mm
memory density - 134217728 bi 134217728 bi
Memory IC Type - EDO DRAM MODULE EDO DRAM MODULE
memory width - 4 4
Number of functions - 1 1
Number of ports - 1 1
Number of terminals - 168 168
word count - 33554432 words 33554432 words
character code - 32000000 32000000
Operating mode - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - 70 °C 70 °C
organize - 32MX4 32MX4
Output characteristics - 3-STATE 3-STATE
Package body material - UNSPECIFIED UNSPECIFIED
encapsulated code - DIMM DIMM
Encapsulate equivalent code - DIMM168 DIMM168
Package shape - RECTANGULAR RECTANGULAR
Package form - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply - 3.3 V 3.3 V
Certification status - Not Qualified Not Qualified
refresh cycle - 4096 4096
Maximum seat height - 38.1 mm 38.1 mm
Maximum standby current - 0.028 A 0.028 A
Maximum slew rate - 2.44 mA 2.08 mA
Maximum supply voltage (Vsup) - 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 3 V 3 V
Nominal supply voltage (Vsup) - 3.3 V 3.3 V
surface mount - NO NO
technology - CMOS CMOS
Temperature level - COMMERCIAL COMMERCIAL
Terminal form - NO LEAD NO LEAD
Terminal pitch - 1.27 mm 1.27 mm
Terminal location - DUAL DUAL
width - 4.8 mm 4.8 mm

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