HB56SW3272ESK-6 datasheet, PDF

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HB56SW3272ESK-6: Description256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components); Categorystorage storage; File Size231KB，29 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56SW3272ESK-6 Overview

256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)

HB56SW3272ESK-6 Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM
I/O type	COMMON
JESD-30 code	R-XDMA-N168
length	133.35 mm
memory density	134217728 bi
Memory IC Type	EDO DRAM MODULE
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	168
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX4
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	38.1 mm
Maximum standby current	0.028 A
Maximum slew rate	2.08 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
width	4.8 mm

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HB56SW3272ESK-5/6

256MB Buffered EDO DRAM DIMM

32-Mword

72-bit, 4k Refresh, 2 Bank Module

(36 pcs of 16M

4 components)

ADE-203-872B (Z)

Rev. 1.0

June 23, 1998

Description

The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been

developed an optimized main memory solution for 4 and 8-byte processor applications. The

HB56SW3272ESK is 32 M

72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM

(HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP

package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access

mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out). Therefore, the

HB56SW3272ESK make high density mounting possible without surface mount technology. The

HB56SW3272ESK provide common data inputs and outputs. Decoupling capacitors are mounted beside

each TCP on its module board.

Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which

would be electrical defects.

Features

•

168-pin socket type package (Dual lead out)



Lead pitch : 1.27 mm

•

Single 3.3 V supply (±0.3 V)

•

High speed



Access time: t

RAC

= 50 ns/60 ns (max)



Access time: t

CAC

= 18 ns/20 ns (max)

•

Low power dissipation



Active mode: 8.78 W/7.49 W (max)



Standby mode (TTL): 295.2 mW (max)

•

JEDEC standard outline buffered 8-byte DIMM

•

Buffered input except

RAS

and DQ

HB56SW3272ESK-6 Related Products

	HB56SW3272ESK-6	HB56SW3272ESK	HB56SW3272ESK-5
Description	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
Maker	Hitachi （Renesas ）	-	Hitachi （Renesas ）
Parts packaging code	DIMM	-	DIMM
package instruction	DIMM, DIMM168	-	DIMM, DIMM168
Contacts	168	-	168
Reach Compliance Code	unknow	-	unknow
ECCN code	EAR99	-	EAR99
access mode	DUAL BANK PAGE BURST	-	DUAL BANK PAGE BURST
Maximum access time	60 ns	-	50 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM	-	RAS ONLY/CAS BEFORE RAS REFRESH; SEATED HGT-NOM
I/O type	COMMON	-	COMMON
JESD-30 code	R-XDMA-N168	-	R-XDMA-N168
length	133.35 mm	-	133.35 mm
memory density	134217728 bi	-	134217728 bi
Memory IC Type	EDO DRAM MODULE	-	EDO DRAM MODULE
memory width	4	-	4
Number of functions	1	-	1
Number of ports	1	-	1
Number of terminals	168	-	168
word count	33554432 words	-	33554432 words
character code	32000000	-	32000000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C
organize	32MX4	-	32MX4
Output characteristics	3-STATE	-	3-STATE
Package body material	UNSPECIFIED	-	UNSPECIFIED
encapsulated code	DIMM	-	DIMM
Encapsulate equivalent code	DIMM168	-	DIMM168
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	-	3.3 V
Certification status	Not Qualified	-	Not Qualified
refresh cycle	4096	-	4096
Maximum seat height	38.1 mm	-	38.1 mm
Maximum standby current	0.028 A	-	0.028 A
Maximum slew rate	2.08 mA	-	2.44 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V
surface mount	NO	-	NO
technology	CMOS	-	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL
Terminal form	NO LEAD	-	NO LEAD
Terminal pitch	1.27 mm	-	1.27 mm
Terminal location	DUAL	-	DUAL
width	4.8 mm	-	4.8 mm

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