Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1015
DESCRIPTION
・With
TO-220Fa package
・Collector
power dissipation
:P
C
=25W@T
C
=25
℃
・Low
collector saturation voltage
・Complement
to type 2SD1406
APPLICATIONS
・For
audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
固电
导½
半
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-60
-7
-3
-0.5
UNIT
V
V
V
A
A
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
2.0
W
25
150
-55~150
℃
℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(BR)
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-3A; I
B
=-0.3A
I
C
=-0.5A ;V
CE
=-5V
V
CB
=-60V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-0.5A; V
CE
=-5V
f=1MHz ; V
CB
=-10V
60
20
9
MIN
-60
2SB1015
TYP.
MAX
UNIT
V
-1.7
-1.0
-100
-100
200
V
V
μA
μA
Switching times
t
on
t
s
t
f
电半
固
Trun-on time
Storage time
Fall time
Collector output capacitance
导½
MHz
pF
HAN
INC
Y
100-200
ES
G
R
L
=15Ω;V
CC
=-30V
I
B1
=-I
B2
=-0.2A
Duty cycle≤1%
MIC
E
OR
UCT
ND
O
150
0.4
1.7
0.5
μs
μs
μs
h
FE-1
Classifications
O
60-120
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1015
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1015
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4