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2SB1015

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size166KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB1015 Overview

Transistor

2SB1015 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1015
DESCRIPTION
・With
TO-220Fa package
・Collector
power dissipation
:P
C
=25W@T
C
=25
・Low
collector saturation voltage
・Complement
to type 2SD1406
APPLICATIONS
・For
audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
固电
导½
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-60
-7
-3
-0.5
UNIT
V
V
V
A
A
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
2.0
W
25
150
-55~150
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature

2SB1015 Related Products

2SB1015 2SB1015Y 2SB1015O
Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1

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