2SK1397 datasheet, PDF - EEWORLD Datasheet

2SK1397: DescriptionPower Field-Effect Transistor, 40A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size148KB，2 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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2SK1397 Overview

Power Field-Effect Transistor, 40A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	40 A
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.13 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Humidity sensitivity level	2
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	130 W
Maximum power dissipation(Abs)	130 W
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	600 ns
Maximum opening time (tons)	520 ns
Base Number Matches	1

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